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@PHDTHESIS{Weber:152031,
      author       = {Weber, Dieter},
      title        = {{O}xygen transport in thin oxide films at high field
                      strength},
      volume       = {33},
      school       = {RWTH Aachen},
      type         = {Dissertation},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {FZJ-2014-01851},
      isbn         = {978-3-89336-950-8},
      series       = {Schriften des Forschungszentrums Jülich. Reihe Information
                      / information},
      pages        = {XII, 115 S.},
      year         = {2014},
      note         = {RWTH Aachen, Diss., 2014},
      abstract     = {Ionic transport in nanostructures at high field strength
                      has recently gained attention, because novel types of
                      computer memory with potentially superior properties rely on
                      such phenomena. The applied voltages are only moderate, but
                      they drop over the distance of a few nanometers and lead to
                      extreme field strengths in the MV/cm region. Such strong
                      fields contributes signicantly to the activation energy for
                      ionic jump processes. This leads to an exponential increase
                      of transport speed with voltage. Conventional
                      high-temperature ionic conduction, in contrast, only relies
                      on thermal activation for such jumps. In this thesis, the
                      transport of minute amounts of oxygen through a thin
                      dielectric layer sandwiched between two thin conducting
                      oxide electrodes was detected semi-quantitatively by
                      measuring the conductance change of the electrodes after
                      applyinga current through the dielectric layer. The relative
                      conductance change $\Delta$G/G as a function of current I
                      and duration t follows over several orders of magnitude a
                      simple, empirical law of the form $\Delta$G/G =
                      CI$^{A}$t$^{B}$ with fit parameters C, A and B; A,B
                      $\epsilon$ [0,1]. This empirical law can be linked to a
                      predicted exponential increase of the transport speed with
                      voltage at high eld strength. The behavior in the time
                      domain can be explained with a spectrum of relaxation
                      processes, similar to the relaxation of dielectrics. The
                      influence of temperature on the transport is strong, but
                      still much lower than expected. This contradicts a commonly
                      used law for high-field ionic transport. The different oxide
                      layers are epitaxial with thicknesses between 5 and 70 nm.
                      First large-scale test samples were fabricated using shadow
                      masks. The general behavior of such devices was studied
                      extensively. In an attempt to achieve quantitative results
                      with defect-free, miniaturized devices, a lithographic
                      manufacturing process that uses repeated steps of epitaxial
                      deposition and structuring of the layers was developed. It
                      employs newly developed and optimized wet chemical etching
                      processes for the conducting electrodes. First high-quality
                      devices could be manufactured with this process and
                      confirmed that such devices suffer less from parasitic
                      effects. The lithographically structured samples were made
                      from different materials. The results from the first test
                      samples and the lithographically structured samples are
                      therefore not directly comparable. They do exhibit however
                      in principle the same behavior. Further investigation of
                      such lithographically structured samples appears promising.},
      keywords     = {Dissertation (GND)},
      cin          = {PGI-5},
      cid          = {I:(DE-Juel1)PGI-5-20110106},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)3 / PUB:(DE-HGF)11},
      url          = {https://juser.fz-juelich.de/record/152031},
}