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000152034 1001_ $$0P:(DE-Juel1)145413$$aDuchamp, Martial$$b0$$eCorresponding Author$$ufzj
000152034 245__ $$aElectron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells
000152034 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2013
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000152034 520__ $$aElectron energy-loss spectroscopy (EELS) is used to study p-doped layers in n-i-p amorphous thin film Si solar cells grown on steel foil substrates. For a solar cell in which an intrinsic amorphous hydrogenated Si (a-Si-H) layer is sandwiched between 10-nm-thick n-doped and p-doped a-Si:H layers, we assess whether core-loss EELS can be used to quantify the B concentration. We compare the shape of the measured B K edge with real space ab initio multiple scattering calculations and show that it is possible to separate the weak B K edge peak from the much stronger Si L edge fine structure by using log-normal fitting functions. The measured B concentration is compared with values obtained from secondary ion mass spectrometry, as well as with EELS results obtained from test samples that contain ∼200-nm-thick a-Si:H layers co-doped with B and C. We also assess whether changes in volume plasmon energy can be related to the B concentration and/or to the density of the material and whether variations of the volume plasmon line-width can be correlated with differences in the scattering of valence electrons in differently doped a-Si:H layers.
000152034 536__ $$0G:(DE-HGF)POF2-424$$a424 - Exploratory materials and phenomena (POF2-424)$$cPOF2-424$$fPOF II$$x0
000152034 7001_ $$0P:(DE-Juel1)144965$$aBoothroyd, Christopher Brian$$b1$$ufzj
000152034 7001_ $$0P:(DE-HGF)0$$aMoreno, S. M.$$b2
000152034 7001_ $$0P:(DE-HGF)0$$avan Aken, B. B.$$b3
000152034 7001_ $$0P:(DE-HGF)0$$aSoppe, W. J.$$b4
000152034 7001_ $$0P:(DE-Juel1)144121$$aDunin-Borkowski, Rafal$$b5$$ufzj
000152034 773__ $$0PERI:(DE-600)1476463-5$$a10.1063/1.4793587$$p093513$$tJournal of applied physics$$v113$$x0021-8979$$y2013
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