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@ARTICLE{Duchamp:152034,
      author       = {Duchamp, Martial and Boothroyd, Christopher Brian and
                      Moreno, S. M. and van Aken, B. B. and Soppe, W. J. and
                      Dunin-Borkowski, Rafal},
      title        = {{E}lectron energy-loss spectroscopy of boron-doped layers
                      in amorphous thin film silicon solar cells},
      journal      = {Journal of applied physics},
      volume       = {113},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {FZJ-2014-01854},
      pages        = {093513},
      year         = {2013},
      abstract     = {Electron energy-loss spectroscopy (EELS) is used to study
                      p-doped layers in n-i-p amorphous thin film Si solar cells
                      grown on steel foil substrates. For a solar cell in which an
                      intrinsic amorphous hydrogenated Si (a-Si-H) layer is
                      sandwiched between 10-nm-thick n-doped and p-doped a-Si:H
                      layers, we assess whether core-loss EELS can be used to
                      quantify the B concentration. We compare the shape of the
                      measured B K edge with real space ab initio multiple
                      scattering calculations and show that it is possible to
                      separate the weak B K edge peak from the much stronger Si L
                      edge fine structure by using log-normal fitting functions.
                      The measured B concentration is compared with values
                      obtained from secondary ion mass spectrometry, as well as
                      with EELS results obtained from test samples that contain
                      ∼200-nm-thick a-Si:H layers co-doped with B and C. We also
                      assess whether changes in volume plasmon energy can be
                      related to the B concentration and/or to the density of the
                      material and whether variations of the volume plasmon
                      line-width can be correlated with differences in the
                      scattering of valence electrons in differently doped a-Si:H
                      layers.},
      cin          = {PGI-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-5-20110106},
      pnm          = {424 - Exploratory materials and phenomena (POF2-424)},
      pid          = {G:(DE-HGF)POF2-424},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000316086500023},
      doi          = {10.1063/1.4793587},
      url          = {https://juser.fz-juelich.de/record/152034},
}