| Hauptseite > Publikationsdatenbank > Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells > print |
| 001 | 152034 | ||
| 005 | 20240610121006.0 | ||
| 024 | 7 | _ | |a 10.1063/1.4793587 |2 doi |
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| 024 | 7 | _ | |a 2128/16799 |2 Handle |
| 037 | _ | _ | |a FZJ-2014-01854 |
| 041 | _ | _ | |a English |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |a Duchamp, Martial |0 P:(DE-Juel1)145413 |b 0 |e Corresponding Author |u fzj |
| 245 | _ | _ | |a Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells |
| 260 | _ | _ | |a Melville, NY |c 2013 |b American Institute of Physics |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 520 | _ | _ | |a Electron energy-loss spectroscopy (EELS) is used to study p-doped layers in n-i-p amorphous thin film Si solar cells grown on steel foil substrates. For a solar cell in which an intrinsic amorphous hydrogenated Si (a-Si-H) layer is sandwiched between 10-nm-thick n-doped and p-doped a-Si:H layers, we assess whether core-loss EELS can be used to quantify the B concentration. We compare the shape of the measured B K edge with real space ab initio multiple scattering calculations and show that it is possible to separate the weak B K edge peak from the much stronger Si L edge fine structure by using log-normal fitting functions. The measured B concentration is compared with values obtained from secondary ion mass spectrometry, as well as with EELS results obtained from test samples that contain ∼200-nm-thick a-Si:H layers co-doped with B and C. We also assess whether changes in volume plasmon energy can be related to the B concentration and/or to the density of the material and whether variations of the volume plasmon line-width can be correlated with differences in the scattering of valence electrons in differently doped a-Si:H layers. |
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| 700 | 1 | _ | |a Boothroyd, Christopher Brian |0 P:(DE-Juel1)144965 |b 1 |u fzj |
| 700 | 1 | _ | |a Moreno, S. M. |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a van Aken, B. B. |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Soppe, W. J. |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Dunin-Borkowski, Rafal |0 P:(DE-Juel1)144121 |b 5 |u fzj |
| 773 | _ | _ | |a 10.1063/1.4793587 |0 PERI:(DE-600)1476463-5 |p 093513 |t Journal of applied physics |v 113 |y 2013 |x 0021-8979 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/152034/files/FZJ-2014-01854.pdf |y OpenAccess |z Published final document. |
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