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037 _ _ |a FZJ-2014-01854
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100 1 _ |a Duchamp, Martial
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245 _ _ |a Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells
260 _ _ |a Melville, NY
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|b American Institute of Physics
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520 _ _ |a Electron energy-loss spectroscopy (EELS) is used to study p-doped layers in n-i-p amorphous thin film Si solar cells grown on steel foil substrates. For a solar cell in which an intrinsic amorphous hydrogenated Si (a-Si-H) layer is sandwiched between 10-nm-thick n-doped and p-doped a-Si:H layers, we assess whether core-loss EELS can be used to quantify the B concentration. We compare the shape of the measured B K edge with real space ab initio multiple scattering calculations and show that it is possible to separate the weak B K edge peak from the much stronger Si L edge fine structure by using log-normal fitting functions. The measured B concentration is compared with values obtained from secondary ion mass spectrometry, as well as with EELS results obtained from test samples that contain ∼200-nm-thick a-Si:H layers co-doped with B and C. We also assess whether changes in volume plasmon energy can be related to the B concentration and/or to the density of the material and whether variations of the volume plasmon line-width can be correlated with differences in the scattering of valence electrons in differently doped a-Si:H layers.
536 _ _ |a 424 - Exploratory materials and phenomena (POF2-424)
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700 1 _ |a Boothroyd, Christopher Brian
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700 1 _ |a Moreno, S. M.
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700 1 _ |a van Aken, B. B.
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700 1 _ |a Soppe, W. J.
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700 1 _ |a Dunin-Borkowski, Rafal
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773 _ _ |a 10.1063/1.4793587
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|t Journal of applied physics
|v 113
|y 2013
|x 0021-8979
856 4 _ |u https://juser.fz-juelich.de/record/152034/files/FZJ-2014-01854.pdf
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