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@ARTICLE{Biron:152035,
      author       = {Biron, R. and Hänni, S. and Boccard, M. and Pahud, C. and
                      Söderström, K. and Duchamp, Martial and Dunin-Borkowski,
                      Rafal and Bugnon, G. and Ding, L. and Nicolay, S. and
                      Parascandolo, G. and Meillaud, F. and Despeisse, M. and
                      Haug, F. J. and Ballif, Chr.},
      title        = {{N}ew {P}rogress in the fabrication of n-i-p micromorph
                      solar cells for opaque substrates},
      journal      = {Solar energy materials $\&$ solar cells},
      volume       = {114},
      issn         = {1879-3398},
      address      = {Amsterdam},
      publisher    = {North Holland},
      reportid     = {FZJ-2014-01855},
      pages        = {147 - 155},
      year         = {2013},
      abstract     = {In this paper, we investigate tandem
                      amorphous/microcrystalline silicon solar cells with
                      asymmetric intermediate reflectors grown in the n–i–p
                      substrate configuration. We compare different types of
                      substrates with respect to their light-trapping properties
                      as well as their influence on the growth of single-junction
                      microcrystalline cells. Our most promising back reflector
                      combines a textured zinc oxide film grown by low-pressure
                      chemical vapor deposition, a silver film for reflection, and
                      a zinc oxide buffer layer. Grown on this substrate,
                      microcrystalline cells exhibit excellent response in the
                      infrared while keeping high open-circuit voltage and fill
                      factor, leading to efficiencies of up to $10.0\%.$ After
                      optimizing the morphology of the asymmetric intermediate
                      reflector, we achieve an n–i–p micromorph solar cell
                      stabilized efficiency of $11.6\%,$ using 270 nm and 1.7 μm
                      of silicon for the absorber layer of the amorphous top cell
                      and the microcrystalline bottom cell, respectively. Using
                      this original device architecture, we reach efficiencies
                      close to those of state-of-the-art n–i–p and p–i–n
                      micromorph devices, demonstrating a promising route to
                      deposit high-efficiency thin-film silicon solar cells on
                      opaque substrates.},
      cin          = {PGI-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-5-20110106},
      pnm          = {424 - Exploratory materials and phenomena (POF2-424)},
      pid          = {G:(DE-HGF)POF2-424},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000319486700019},
      doi          = {10.1016/j.solmat.2013.02.032},
      url          = {https://juser.fz-juelich.de/record/152035},
}