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@ARTICLE{Kovacs:152036,
      author       = {Kovacs, Andras and Ney, A. and Duchamp, Martial and Ney, V.
                      and Boothroyd, Christopher Brian and Galindo, P. L. and
                      Kaspar, T. C. and Chambers, S. A. and Dunin-Borkowski,
                      Rafal},
      title        = {{D}efects in paramagnetic {C}o-doped {Z}n{O} films studied
                      by {T}ransmission electron microscopy},
      journal      = {Journal of applied physics},
      volume       = {114},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {FZJ-2014-01856},
      pages        = {243503},
      year         = {2013},
      abstract     = {We study planar defects in epitaxial Co:ZnO dilute magnetic
                      semiconductor thin films deposited on c-plane sapphire
                      (Al2O3), as well as the Co:ZnO/Al2O3 interface, using
                      aberration-corrected transmission electron microscopy and
                      electron energy-loss spectroscopy. Co:ZnO samples that were
                      deposited using pulsed laser deposition and reactive
                      magnetron sputtering are both found to contain extrinsic
                      stacking faults, incoherent interface structures, and
                      compositional variations within the first 3–4 Co:ZnO
                      layers next to the Al2O3 substrate. The stacking fault
                      density is in the range of 1017 cm−3. We also measure
                      the local lattice distortions around the stacking faults. It
                      is shown that despite the relatively high density of planar
                      defects, lattice distortions, and small compositional
                      variation, the Co:ZnO films retain paramagnetic properties.},
      cin          = {PGI-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-5-20110106},
      pnm          = {424 - Exploratory materials and phenomena (POF2-424)},
      pid          = {G:(DE-HGF)POF2-424},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000329173200011},
      doi          = {10.1063/1.4851015},
      url          = {https://juser.fz-juelich.de/record/152036},
}