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@ARTICLE{Sever:152037,
author = {Sever, M. and Lipovsek, B. and Krc, J. and Campa, A. and
Plaza, Guillermo Sanchez and Haug, F. J. and Duchamp,
Martial and Soppe, W. and Topic, M.},
title = {{C}ombined model of non-conformal layer growth for accurate
optical simulation of thin-film silicon solar cells},
journal = {Solar energy materials $\&$ solar cells},
volume = {119},
issn = {1879-3398},
address = {Amsterdam},
publisher = {North Holland},
reportid = {FZJ-2014-01857},
pages = {59-66},
year = {2013},
abstract = {In thin-film silicon solar cells textured interfaces are
introduced, leading to improved antireflection and light
trapping capabilities of the devices. Thin-layers are
deposited on surface-textured substrates or superstrates and
the texture is translated to internal interfaces. For
accurate optical modelling of the thin-film silicon solar
cells it is important to define and include the morphology
of textured interfaces as realistic as possible. In this
paper we present a model of thin-layer growth on textured
surfaces which combines two growth principles: conformal and
isotropic one. With the model we can predict the morphology
of subsequent internal interfaces in thin-film silicon solar
cells based on the known morphology of the substrate or
superstrate. Calibration of the model for different
materials grown under certain conditions is done on various
cross-sectional scanning electron microscopy images of
realistic devices. Advantages over existing growth modelling
approaches are demonstrated—one of them is the ability of
the model to predict and omit the textures with high
possibility of defective regions formation inside the Si
absorber layers. The developed model of layer growth is used
in rigorous 3-D optical simulations employing the COMSOL
simulator. A sinusoidal texture of the substrate is
optimised for the case of a micromorph silicon solar cell.
More than a 50 $\%$ increase in short-circuit current
density of the bottom cell with respect to the flat case is
predicted, considering the defect-free absorber layers. The
developed approach enables accurate prediction and powerful
design of current-matched top and bottom cell.},
cin = {PGI-5},
ddc = {530},
cid = {I:(DE-Juel1)PGI-5-20110106},
pnm = {424 - Exploratory materials and phenomena (POF2-424)},
pid = {G:(DE-HGF)POF2-424},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000326908000008},
doi = {10.1016/j.solmat.2013.05.016},
url = {https://juser.fz-juelich.de/record/152037},
}