TY  - JOUR
AU  - Wortmann, D.
AU  - Blügel, S.
TI  - Influence of the electronic structure on tunneling through ferroelectric  insulators: Application to BaTiO3 and PbTiO33
JO  - Physical review / B
VL  - 83
IS  - 15
SN  - 1098-0121
CY  - College Park, Md.
PB  - APS
M1  - PreJuSER-15213
SP  - 155114
PY  - 2011
N1  - Record converted from VDB: 12.11.2012
AB  - Electronic tunneling through ferroelectric insulators is considered to be a key ingredient of future oxide electronics. We investigate the role of the electronic band structure of the decaying electronic states in the band gap by first discussing the expected behavior of tunneling in the effective mass model. We demonstrate that, even for the simple prototype ferroelectric oxides in the perovskite structures PbTiO3 and BaTiO3, the basic assumption of the effective mass model is not appropriate, and that the correct interpretation of tunneling in these materials requires a material-specific description of the evanescent states as provided by the complex band structure.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000291977300003
DO  - DOI:10.1103/PhysRevB.83.155114
UR  - https://juser.fz-juelich.de/record/15213
ER  -