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@ARTICLE{Wortmann:15213,
author = {Wortmann, D. and Blügel, S.},
title = {{I}nfluence of the electronic structure on tunneling
through ferroelectric insulators: {A}pplication to
{B}a{T}i{O}3 and {P}b{T}i{O}33},
journal = {Physical review / B},
volume = {83},
number = {15},
issn = {1098-0121},
address = {College Park, Md.},
publisher = {APS},
reportid = {PreJuSER-15213},
pages = {155114},
year = {2011},
note = {Record converted from VDB: 12.11.2012},
abstract = {Electronic tunneling through ferroelectric insulators is
considered to be a key ingredient of future oxide
electronics. We investigate the role of the electronic band
structure of the decaying electronic states in the band gap
by first discussing the expected behavior of tunneling in
the effective mass model. We demonstrate that, even for the
simple prototype ferroelectric oxides in the perovskite
structures PbTiO3 and BaTiO3, the basic assumption of the
effective mass model is not appropriate, and that the
correct interpretation of tunneling in these materials
requires a material-specific description of the evanescent
states as provided by the complex band structure.},
keywords = {J (WoSType)},
cin = {IAS-1 / JARA-FIT / JARA-SIM / PGI-1},
ddc = {530},
cid = {I:(DE-Juel1)IAS-1-20090406 / $I:(DE-82)080009_20140620$ /
I:(DE-Juel1)VDB1045 / I:(DE-Juel1)PGI-1-20110106},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Physics, Condensed Matter},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000291977300003},
doi = {10.1103/PhysRevB.83.155114},
url = {https://juser.fz-juelich.de/record/15213},
}