000153137 001__ 153137
000153137 005__ 20210129213651.0
000153137 037__ $$aFZJ-2014-02801
000153137 041__ $$aEnglish
000153137 1001_ $$0P:(DE-Juel1)138870$$aGunel, Yusuf$$b0$$eCorresponding Author$$gmale$$ufzj
000153137 245__ $$aQuantum Transport in Nanowire-based Hybrid Devices$$f2013-05-08
000153137 260__ $$c2013
000153137 300__ $$a170
000153137 3367_ $$0PUB:(DE-HGF)11$$2PUB:(DE-HGF)$$aDissertation / PhD Thesis$$bphd$$mphd$$s1397473418_17876
000153137 3367_ $$02$$2EndNote$$aThesis
000153137 3367_ $$2DRIVER$$adoctoralThesis
000153137 3367_ $$2BibTeX$$aPHDTHESIS
000153137 3367_ $$2DataCite$$aOutput Types/Dissertation
000153137 3367_ $$2ORCID$$aDISSERTATION
000153137 502__ $$aRWTH Aachen, Diss., 2013$$bDr.$$cRWTH Aachen$$d2013
000153137 520__ $$aWe have studied the low-temperature transport properties of nanowires contacted by a normal metal as well as by superconducting electrodes. As a consequence of quantum coherence, we have demonstrated the electron interference effect in different aspects. The mesoscopic phase coherent transport properties were studied by contacting the semiconductor InAs and InSb nanowires with normal metal electrodes. Moreover, we explored the interaction of the microscopic quantum coherence of the nanowires with the macroscopic quantum coherence of the superconductors. In superconducting Nb contacted InAs nanowire junctions, we have investigated the effect of temperature, magnetic field and electric field on the supercurrent. Owing to relatively high critical temperature of superconducting Nb ($T_{c}\sim9\,$K), we have observed the supercurrent up to 4\,K for highly doped nanowire-based junctions, while for low doped nanowire-based junctions a full control of the supercurrent was achieved. Due to low transversal dimension of the nanowires, we have found a monotonous decay of the critical current in magnetic field dependent measurements. The experimental results were analyzed within narrow junction model which has been developed recently. At high bias voltages, we have observed subharmonic energy gap structures as a consequence of multiple Andreev reflection. Some of the nanowires were etched, such that the superconducting Nb electrodes are connected to both ends of the nanowire rather than covering the surface of the nanowire. As a result of well defined nanowire-superconductor interfaces, we have examined quasiparticle interference effect in magnetotransport measurements. Furthermore, we have developed a new junction geometry, such that one of the superconducting Nb electrodes is replaced by a superconducting Al. Owing to the smaller critical magnetic field of superconducting Al ($B_{c}\sim15-50\,$mT), compared to superconducting Nb ($B_{c}\sim3\,$T), we were able to studied the Andreev reflection of quasiparticles at single interface, by suppressing the superconductivity of Al with small magnetic fields, as well as at double interface for zero magnetic field. The junction geometry was further changed by replacing the InAs nanowire with the InAs tube. In this case the GaAs/InAs core/shell tubular nanowires were contacted by two superconducting Nb electrodes. For this junction geometry we have demonstrated the interference of phase conjugated electron-hole pairs in the presence of coaxial magnetic. The effect of temperature, constant dc bias current and gate voltage on the magnetoresistance oscillations were examined. In the last part of this thesis, we have fabricated and characterized the single crystal Au nanowire-based proximity superconducting quantum interference device (SQUID).
000153137 536__ $$0G:(DE-HGF)POF2-422$$a422 - Spin-based and quantum information (POF2-422)$$cPOF2-422$$fPOF II$$x0
000153137 650_7 $$0V:(DE-588b)4012494-0$$2GND$$aDissertation$$xDiss.
000153137 773__ $$y2013
000153137 8564_ $$uhttp://darwin.bth.rwth-aachen.de/opus3/volltexte/2013/4743/pdf/4743.pdf
000153137 909CO $$ooai:juser.fz-juelich.de:153137$$pVDB
000153137 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)138870$$aForschungszentrum Jülich GmbH$$b0$$kFZJ
000153137 9132_ $$0G:(DE-HGF)POF3-522$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Spin-Based Phenomena$$x0
000153137 9131_ $$0G:(DE-HGF)POF2-422$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vSpin-based and quantum information$$x0
000153137 9141_ $$y2013
000153137 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000153137 980__ $$aphd
000153137 980__ $$aVDB
000153137 980__ $$aI:(DE-Juel1)PGI-9-20110106
000153137 980__ $$aUNRESTRICTED