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000153148 0247_ $$2doi$$a10.1021/nl4035169
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000153148 0247_ $$2ISSN$$a1530-6984
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000153148 037__ $$aFZJ-2014-02811
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000153148 1001_ $$0P:(DE-HGF)0$$aZhang, Mengyao$$b0$$eCorresponding Author
000153148 245__ $$aAmphoteric Nature of Sn in CdS Nanowires
000153148 260__ $$aWashington, DC$$bACS Publ.$$c2014
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000153148 520__ $$aHigh-quality CdS nanowires with uniform Sn doping were synthesized using a Sn-catalyzed chemical vapor deposition method. X-ray diffraction and transmission electron microscopy demonstrate the single crystalline wurtzite structure of the CdS/Sn nanowires. Both donor and acceptor levels, which originate from the amphoteric nature of Sn in II–VI semiconductors, are identified using low-temperature microphotoluminescence. This self-compensation effect was cross examined by gate modulation and temperature-dependent electrical transport measurement. They show an overall n-type behavior with relatively low carrier concentration and low carrier mobilities. Moreover, two different donor levels due to intrinsic and extrinsic doping could be distinguished. They agree well with both the electrical and optical data.
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000153148 7001_ $$0P:(DE-HGF)0$$aWille, Marcel$$b1
000153148 7001_ $$0P:(DE-HGF)0$$aRöder, Robert$$b2
000153148 7001_ $$0P:(DE-Juel1)140272$$aHeedt, Sebastian$$b3$$ufzj
000153148 7001_ $$0P:(DE-HGF)0$$aHuang, Liubing$$b4
000153148 7001_ $$0P:(DE-HGF)0$$aZhu, Zheng$$b5
000153148 7001_ $$0P:(DE-HGF)0$$aGeburt, Sebastian$$b6
000153148 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b7$$ufzj
000153148 7001_ $$0P:(DE-Juel1)128634$$aSchäpers, Thomas$$b8$$ufzj
000153148 7001_ $$0P:(DE-HGF)0$$aRonning, Carsten$$b9
000153148 7001_ $$0P:(DE-HGF)0$$aLu, Jia Grace$$b10
000153148 773__ $$0PERI:(DE-600)2048866-X$$a10.1021/nl4035169$$gVol. 14, no. 2, p. 518 - 523$$n2$$p518 - 523$$tNano letters$$v14$$x1530-6992$$y2014
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