001     153148
005     20210129213652.0
024 7 _ |a 10.1021/nl4035169
|2 doi
024 7 _ |a 1530-6992
|2 ISSN
024 7 _ |a 1530-6984
|2 ISSN
024 7 _ |a WOS:000331343900019
|2 WOS
037 _ _ |a FZJ-2014-02811
082 _ _ |a 540
100 1 _ |a Zhang, Mengyao
|0 P:(DE-HGF)0
|b 0
|e Corresponding Author
245 _ _ |a Amphoteric Nature of Sn in CdS Nanowires
260 _ _ |a Washington, DC
|c 2014
|b ACS Publ.
336 7 _ |a Journal Article
|b journal
|m journal
|0 PUB:(DE-HGF)16
|s 1397474802_17883
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|0 0
|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
520 _ _ |a High-quality CdS nanowires with uniform Sn doping were synthesized using a Sn-catalyzed chemical vapor deposition method. X-ray diffraction and transmission electron microscopy demonstrate the single crystalline wurtzite structure of the CdS/Sn nanowires. Both donor and acceptor levels, which originate from the amphoteric nature of Sn in II–VI semiconductors, are identified using low-temperature microphotoluminescence. This self-compensation effect was cross examined by gate modulation and temperature-dependent electrical transport measurement. They show an overall n-type behavior with relatively low carrier concentration and low carrier mobilities. Moreover, two different donor levels due to intrinsic and extrinsic doping could be distinguished. They agree well with both the electrical and optical data.
536 _ _ |a 421 - Frontiers of charge based Electronics (POF2-421)
|0 G:(DE-HGF)POF2-421
|c POF2-421
|f POF II
|x 0
588 _ _ |a Dataset connected to CrossRef, juser.fz-juelich.de
700 1 _ |a Wille, Marcel
|0 P:(DE-HGF)0
|b 1
700 1 _ |a Röder, Robert
|0 P:(DE-HGF)0
|b 2
700 1 _ |a Heedt, Sebastian
|0 P:(DE-Juel1)140272
|b 3
|u fzj
700 1 _ |a Huang, Liubing
|0 P:(DE-HGF)0
|b 4
700 1 _ |a Zhu, Zheng
|0 P:(DE-HGF)0
|b 5
700 1 _ |a Geburt, Sebastian
|0 P:(DE-HGF)0
|b 6
700 1 _ |a Grützmacher, Detlev
|0 P:(DE-Juel1)125588
|b 7
|u fzj
700 1 _ |a Schäpers, Thomas
|0 P:(DE-Juel1)128634
|b 8
|u fzj
700 1 _ |a Ronning, Carsten
|0 P:(DE-HGF)0
|b 9
700 1 _ |a Lu, Jia Grace
|0 P:(DE-HGF)0
|b 10
773 _ _ |a 10.1021/nl4035169
|g Vol. 14, no. 2, p. 518 - 523
|0 PERI:(DE-600)2048866-X
|n 2
|p 518 - 523
|t Nano letters
|v 14
|y 2014
|x 1530-6992
856 4 _ |u https://juser.fz-juelich.de/record/153148/files/FZJ-2014-02811.pdf
|z Published final document.
|y Restricted
909 C O |o oai:juser.fz-juelich.de:153148
|p VDB
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 3
|6 P:(DE-Juel1)140272
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 7
|6 P:(DE-Juel1)125588
910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
|k FZJ
|b 8
|6 P:(DE-Juel1)128634
913 2 _ |a DE-HGF
|b Key Technologies
|l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)
|1 G:(DE-HGF)POF3-520
|0 G:(DE-HGF)POF3-521
|2 G:(DE-HGF)POF3-500
|v Controlling Electron Charge-Based Phenomena
|x 0
913 1 _ |a DE-HGF
|b Schlüsseltechnologien
|1 G:(DE-HGF)POF2-420
|0 G:(DE-HGF)POF2-421
|2 G:(DE-HGF)POF2-400
|v Frontiers of charge based Electronics
|x 0
|4 G:(DE-HGF)POF
|3 G:(DE-HGF)POF2
|l Grundlagen zukünftiger Informationstechnologien
914 1 _ |y 2014
915 _ _ |a JCR/ISI refereed
|0 StatID:(DE-HGF)0010
|2 StatID
915 _ _ |a JCR
|0 StatID:(DE-HGF)0100
|2 StatID
915 _ _ |a WoS
|0 StatID:(DE-HGF)0110
|2 StatID
|b Science Citation Index
915 _ _ |a WoS
|0 StatID:(DE-HGF)0111
|2 StatID
|b Science Citation Index Expanded
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0150
|2 StatID
|b Web of Science Core Collection
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0199
|2 StatID
|b Thomson Reuters Master Journal List
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0200
|2 StatID
|b SCOPUS
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0300
|2 StatID
|b Medline
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)0310
|2 StatID
|b NCBI Molecular Biology Database
915 _ _ |a DBCoverage
|0 StatID:(DE-HGF)1040
|2 StatID
|b Zoological Record
920 1 _ |0 I:(DE-Juel1)PGI-9-20110106
|k PGI-9
|l Halbleiter-Nanoelektronik
|x 0
980 _ _ |a journal
980 _ _ |a VDB
980 _ _ |a I:(DE-Juel1)PGI-9-20110106
980 _ _ |a UNRESTRICTED


LibraryCollectionCLSMajorCLSMinorLanguageAuthor
Marc 21