%0 Journal Article
%A Zhang, Chao
%A Meier, Matthias
%A Lambertz, Andreas
%A Smirnov, Vladimir
%A Holländer, Bernhard
%A Gordijn, Aad
%A Merdzhanova, Tsvetelina
%T Optical and Electrical Effects of p-type μc-SiOx:H in Thin-Film Silicon Solar Cells on Various Front Textures
%J International journal of photoenergy
%V 2014
%@ 1687-529X
%C New York, NY [u.a.]
%I Hindawi Publ. Corp.
%M FZJ-2014-02831
%P 1 - 10
%D 2014
%X p-type hydrogenated microcrystalline silicon oxide (µc-Si :H) was developed and implemented as a contact layer in hydrogenated amorphous silicon (a-Si:H) single junction solar cells. Higher transparency, sufficient electrical conductivity, low ohmic contact to sputtered ZnO:Al, and tunable refractive index make p-type µc-Si :H a promising alternative to the commonly used p-type hydrogenated microcrystalline silicon (µc-Si:H) contact layers. In this work, p-type µc-Si :H layers were fabricated with a conductivity of up to 10−2 S/cm and a Raman crystallinity of above 60%. Furthermore, we present p-type µc-Si :H films with a broad range of optical properties (2.1 eV < band gap  eV and 1.6 < refractive index ). These properties can be tuned by adapting deposition parameters, for example, the CO2/SiH4 deposition gas ratio. A conversion efficiency improvement of a-Si:H solar cells is achieved by applying p-type µc-Si :H contact layer compared to the standard p-type µc-Si:H contact layer. As another aspect, the influence of the front side texture on a-Si:H p-i-n solar cells with different p-type contact layers, µc-Si:H and µc-Si :H, is investigated. Furthermore, we discuss the correlation between the decrease of and the cell surface area derived from AFM measurements.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000335024700001
%R 10.1155/2014/176965
%U https://juser.fz-juelich.de/record/153171