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@ARTICLE{Zhang:153171,
      author       = {Zhang, Chao and Meier, Matthias and Lambertz, Andreas and
                      Smirnov, Vladimir and Holländer, Bernhard and Gordijn, Aad
                      and Merdzhanova, Tsvetelina},
      title        = {{O}ptical and {E}lectrical {E}ffects of p-type
                      μc-{S}i{O}x:{H} in {T}hin-{F}ilm {S}ilicon {S}olar {C}ells
                      on {V}arious {F}ront {T}extures},
      journal      = {International journal of photoenergy},
      volume       = {2014},
      issn         = {1687-529X},
      address      = {New York, NY [u.a.]},
      publisher    = {Hindawi Publ. Corp.},
      reportid     = {FZJ-2014-02831},
      pages        = {1 - 10},
      year         = {2014},
      abstract     = {p-type hydrogenated microcrystalline silicon oxide (µc-Si
                      :H) was developed and implemented as a contact layer in
                      hydrogenated amorphous silicon (a-Si:H) single junction
                      solar cells. Higher transparency, sufficient electrical
                      conductivity, low ohmic contact to sputtered ZnO:Al, and
                      tunable refractive index make p-type µc-Si :H a promising
                      alternative to the commonly used p-type hydrogenated
                      microcrystalline silicon (µc-Si:H) contact layers. In this
                      work, p-type µc-Si :H layers were fabricated with a
                      conductivity of up to 10−2 S/cm and a Raman
                      crystallinity of above $60\%.$ Furthermore, we present
                      p-type µc-Si :H films with a broad range of optical
                      properties (2.1 eV < band gap  eV and 1.6 < refractive
                      index ). These properties can be tuned by adapting
                      deposition parameters, for example, the CO2/SiH4 deposition
                      gas ratio. A conversion efficiency improvement of a-Si:H
                      solar cells is achieved by applying p-type µc-Si :H contact
                      layer compared to the standard p-type µc-Si:H contact
                      layer. As another aspect, the influence of the front side
                      texture on a-Si:H p-i-n solar cells with different p-type
                      contact layers, µc-Si:H and µc-Si :H, is investigated.
                      Furthermore, we discuss the correlation between the decrease
                      of and the cell surface area derived from AFM measurements.},
      cin          = {IEK-5},
      ddc          = {540},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {111 - Thin Film Photovoltaics (POF2-111) / HITEC -
                      Helmholtz Interdisciplinary Doctoral Training in Energy and
                      Climate Research (HITEC) (HITEC-20170406)},
      pid          = {G:(DE-HGF)POF2-111 / G:(DE-Juel1)HITEC-20170406},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000335024700001},
      doi          = {10.1155/2014/176965},
      url          = {https://juser.fz-juelich.de/record/153171},
}