001     153171
005     20240712084455.0
024 7 _ |a 10.1155/2014/176965
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024 7 _ |a 1110-662X
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024 7 _ |a 1687-529X
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024 7 _ |a 2128/7817
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037 _ _ |a FZJ-2014-02831
082 _ _ |a 540
100 1 _ |a Zhang, Chao
|0 P:(DE-Juel1)136680
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|u fzj
245 _ _ |a Optical and Electrical Effects of p-type μc-SiOx:H in Thin-Film Silicon Solar Cells on Various Front Textures
260 _ _ |a New York, NY [u.a.]
|c 2014
|b Hindawi Publ. Corp.
336 7 _ |a Journal Article
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520 _ _ |a p-type hydrogenated microcrystalline silicon oxide (µc-Si :H) was developed and implemented as a contact layer in hydrogenated amorphous silicon (a-Si:H) single junction solar cells. Higher transparency, sufficient electrical conductivity, low ohmic contact to sputtered ZnO:Al, and tunable refractive index make p-type µc-Si :H a promising alternative to the commonly used p-type hydrogenated microcrystalline silicon (µc-Si:H) contact layers. In this work, p-type µc-Si :H layers were fabricated with a conductivity of up to 10−2 S/cm and a Raman crystallinity of above 60%. Furthermore, we present p-type µc-Si :H films with a broad range of optical properties (2.1 eV < band gap  eV and 1.6 < refractive index ). These properties can be tuned by adapting deposition parameters, for example, the CO2/SiH4 deposition gas ratio. A conversion efficiency improvement of a-Si:H solar cells is achieved by applying p-type µc-Si :H contact layer compared to the standard p-type µc-Si:H contact layer. As another aspect, the influence of the front side texture on a-Si:H p-i-n solar cells with different p-type contact layers, µc-Si:H and µc-Si :H, is investigated. Furthermore, we discuss the correlation between the decrease of and the cell surface area derived from AFM measurements.
536 _ _ |a 111 - Thin Film Photovoltaics (POF2-111)
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|a HITEC - Helmholtz Interdisciplinary Doctoral Training in Energy and Climate Research (HITEC) (HITEC-20170406)
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700 1 _ |a Meier, Matthias
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700 1 _ |a Lambertz, Andreas
|0 P:(DE-Juel1)130263
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700 1 _ |a Smirnov, Vladimir
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700 1 _ |a Holländer, Bernhard
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700 1 _ |a Gordijn, Aad
|0 P:(DE-Juel1)130242
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700 1 _ |a Merdzhanova, Tsvetelina
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773 _ _ |a 10.1155/2014/176965
|g Vol. 2014, p. 1 - 10
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|t International journal of photoenergy
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|y 2014
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913 2 _ |a DE-HGF
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914 1 _ |y 2014
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