%0 Conference Paper
%A Trellenkamp, St.
%A Mikulics, M.
%A Winden, A.
%A Adam, Roman
%A Moers, J.
%A Marso, M.
%A Grutzmacher, D.
%A Hardtdegen, H.
%T Tuning the spectral sensitivity of vertical InN nanopyramid based photodetectors by means of band gap engineering and/or nanostructure size control
%I IEEE
%M FZJ-2014-02935
%P 223-226
%D 2012
%< The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems : [Proceedings] - IEEE, 2012. - ISBN 978-1-4673-1198-4978-1-4673-1197-7978-1-4673-1196-0 - doi:10.1109/ASDAM.2012.6418527
%X We fabricated and tested InN nanopyramid based photodetectors designed for operation in the telecommunication-wavelength range. We found that the spectral sensitivity of InN photodetectors can be engineered by their size and by the strain interaction with the masked SiO2/GaN substrates. The band edge luminescence energy of the InN nanopyramids depends linearly on the structure size. Furthermore, InN nanopyramid based photodetectors exhibit a low device RC constant, low dark currents below 1 nA, as well as a responsivity of ∼ 0.2 A/W at 1550 nm wavelength. InN nanopyramid based photodetectors are very promising candidates for high-speed optoelectronics within the telecommunication wavelength range. © 2012 IEEE.
%B 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)
%C 11 Nov 2012 - 15 Nov 2012, Smolenice (Slovakia)
Y2 11 Nov 2012 - 15 Nov 2012
M2 Smolenice, Slovakia
%F PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
%9 Contribution to a conference proceedingsContribution to a book
%R 10.1109/ASDAM.2012.6418527
%U https://juser.fz-juelich.de/record/153292