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000153292 1001_ $$0P:(DE-Juel1)128856$$aTrellenkamp, St.$$b0$$eCorresponding Author
000153292 1112_ $$a2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)$$cSmolenice$$d2012-11-11 - 2012-11-15$$wSlovakia
000153292 245__ $$aTuning the spectral sensitivity of vertical InN nanopyramid based photodetectors by means of band gap engineering and/or nanostructure size control
000153292 260__ $$bIEEE$$c2012
000153292 29510 $$aThe Ninth International Conference on Advanced Semiconductor Devices and Mircosystems : [Proceedings] - IEEE, 2012. - ISBN 978-1-4673-1198-4978-1-4673-1197-7978-1-4673-1196-0 - doi:10.1109/ASDAM.2012.6418527
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000153292 520__ $$aWe fabricated and tested InN nanopyramid based photodetectors designed for operation in the telecommunication-wavelength range. We found that the spectral sensitivity of InN photodetectors can be engineered by their size and by the strain interaction with the masked SiO2/GaN substrates. The band edge luminescence energy of the InN nanopyramids depends linearly on the structure size. Furthermore, InN nanopyramid based photodetectors exhibit a low device RC constant, low dark currents below 1 nA, as well as a responsivity of ∼ 0.2 A/W at 1550 nm wavelength. InN nanopyramid based photodetectors are very promising candidates for high-speed optoelectronics within the telecommunication wavelength range. © 2012 IEEE.
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000153292 7001_ $$0P:(DE-Juel1)128613$$aMikulics, M.$$b1$$ufzj
000153292 7001_ $$0P:(DE-Juel1)144014$$aWinden, A.$$b2$$ufzj
000153292 7001_ $$0P:(DE-Juel1)130495$$aAdam, Roman$$b3$$ufzj
000153292 7001_ $$0P:(DE-Juel1)128616$$aMoers, J.$$b4$$ufzj
000153292 7001_ $$0P:(DE-HGF)0$$aMarso, M.$$b5
000153292 7001_ $$0P:(DE-Juel1)125588$$aGrutzmacher, D.$$b6$$ufzj
000153292 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, H.$$b7$$ufzj
000153292 773__ $$a10.1109/ASDAM.2012.6418527
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