TY  - CONF
AU  - Trellenkamp, St.
AU  - Mikulics, M.
AU  - Winden, A.
AU  - Adam, Roman
AU  - Moers, J.
AU  - Marso, M.
AU  - Grutzmacher, D.
AU  - Hardtdegen, H.
TI  - Tuning the spectral sensitivity of vertical InN nanopyramid based photodetectors by means of band gap engineering and/or nanostructure size control
PB  - IEEE
M1  - FZJ-2014-02935
SP  - 223-226
PY  - 2012
AB  - We fabricated and tested InN nanopyramid based photodetectors designed for operation in the telecommunication-wavelength range. We found that the spectral sensitivity of InN photodetectors can be engineered by their size and by the strain interaction with the masked SiO2/GaN substrates. The band edge luminescence energy of the InN nanopyramids depends linearly on the structure size. Furthermore, InN nanopyramid based photodetectors exhibit a low device RC constant, low dark currents below 1 nA, as well as a responsivity of ∼ 0.2 A/W at 1550 nm wavelength. InN nanopyramid based photodetectors are very promising candidates for high-speed optoelectronics within the telecommunication wavelength range. © 2012 IEEE.
T2  - 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)
CY  - 11 Nov 2012 - 15 Nov 2012, Smolenice (Slovakia)
Y2  - 11 Nov 2012 - 15 Nov 2012
M2  - Smolenice, Slovakia
LB  - PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
DO  - DOI:10.1109/ASDAM.2012.6418527
UR  - https://juser.fz-juelich.de/record/153292
ER  -