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@INPROCEEDINGS{Trellenkamp:153292,
      author       = {Trellenkamp, St. and Mikulics, M. and Winden, A. and Adam,
                      Roman and Moers, J. and Marso, M. and Grutzmacher, D. and
                      Hardtdegen, H.},
      title        = {{T}uning the spectral sensitivity of vertical {I}n{N}
                      nanopyramid based photodetectors by means of band gap
                      engineering and/or nanostructure size control},
      publisher    = {IEEE},
      reportid     = {FZJ-2014-02935},
      pages        = {223-226},
      year         = {2012},
      comment      = {The Ninth International Conference on Advanced
                      Semiconductor Devices and Mircosystems : [Proceedings] -
                      IEEE, 2012. - ISBN
                      978-1-4673-1198-4978-1-4673-1197-7978-1-4673-1196-0 -
                      doi:10.1109/ASDAM.2012.6418527},
      booktitle     = {The Ninth International Conference on
                       Advanced Semiconductor Devices and
                       Mircosystems : [Proceedings] - IEEE,
                       2012. - ISBN
                       978-1-4673-1198-4978-1-4673-1197-7978-1-4673-1196-0
                       - doi:10.1109/ASDAM.2012.6418527},
      abstract     = {We fabricated and tested InN nanopyramid based
                      photodetectors designed for operation in the
                      telecommunication-wavelength range. We found that the
                      spectral sensitivity of InN photodetectors can be engineered
                      by their size and by the strain interaction with the masked
                      SiO2/GaN substrates. The band edge luminescence energy of
                      the InN nanopyramids depends linearly on the structure size.
                      Furthermore, InN nanopyramid based photodetectors exhibit a
                      low device RC constant, low dark currents below 1 nA, as
                      well as a responsivity of ∼ 0.2 A/W at 1550 nm wavelength.
                      InN nanopyramid based photodetectors are very promising
                      candidates for high-speed optoelectronics within the
                      telecommunication wavelength range. © 2012 IEEE.},
      month         = {Nov},
      date          = {2012-11-11},
      organization  = {2012 International Conference on
                       Advanced Semiconductor Devices $\&$
                       Microsystems (ASDAM), Smolenice
                       (Slovakia), 11 Nov 2012 - 15 Nov 2012},
      cin          = {PGI-9 / PGI-6 / PGI-8 / JARA-FIT},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-6-20110106 /
                      I:(DE-Juel1)PGI-8-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {423 - Sensorics and bioinspired systems (POF2-423)},
      pid          = {G:(DE-HGF)POF2-423},
      typ          = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7},
      doi          = {10.1109/ASDAM.2012.6418527},
      url          = {https://juser.fz-juelich.de/record/153292},
}