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| Hauptseite > Publikationsdatenbank > Tuning the spectral sensitivity of vertical InN nanopyramid based photodetectors by means of band gap engineering and/or nanostructure size control > print |
| Hauptseite > Publikationsdatenbank > Tuning the spectral sensitivity of vertical InN nanopyramid based photodetectors by means of band gap engineering and/or nanostructure size control > print |
| 001 | 153292 | ||
| 005 | 20210129213720.0 | ||
| 024 | 7 | _ | |a 10.1109/ASDAM.2012.6418527 |2 doi |
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| 100 | 1 | _ | |a Trellenkamp, St. |0 P:(DE-Juel1)128856 |b 0 |e Corresponding Author |
| 111 | 2 | _ | |a 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) |c Smolenice |d 2012-11-11 - 2012-11-15 |w Slovakia |
| 245 | _ | _ | |a Tuning the spectral sensitivity of vertical InN nanopyramid based photodetectors by means of band gap engineering and/or nanostructure size control |
| 260 | _ | _ | |c 2012 |b IEEE |
| 295 | 1 | 0 | |a The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems : [Proceedings] - IEEE, 2012. - ISBN 978-1-4673-1198-4978-1-4673-1197-7978-1-4673-1196-0 - doi:10.1109/ASDAM.2012.6418527 |
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| 520 | _ | _ | |a We fabricated and tested InN nanopyramid based photodetectors designed for operation in the telecommunication-wavelength range. We found that the spectral sensitivity of InN photodetectors can be engineered by their size and by the strain interaction with the masked SiO2/GaN substrates. The band edge luminescence energy of the InN nanopyramids depends linearly on the structure size. Furthermore, InN nanopyramid based photodetectors exhibit a low device RC constant, low dark currents below 1 nA, as well as a responsivity of ∼ 0.2 A/W at 1550 nm wavelength. InN nanopyramid based photodetectors are very promising candidates for high-speed optoelectronics within the telecommunication wavelength range. © 2012 IEEE. |
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