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000153293 0247_ $$2doi$$a10.1109/ASDAM.2012.6418553
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000153293 1001_ $$0P:(DE-Juel1)128613$$aMikulics, M.$$b0$$eCorresponding Author$$ufzj
000153293 1112_ $$a2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)$$cSmolenice$$d2012-11-11 - 2012-11-15$$wSlovakia
000153293 245__ $$aGaAs nanowhiskers for femtosecond photodetectors and THz emitters
000153293 260__ $$bIEEE$$c2012
000153293 29510 $$aThe Ninth International Conference on Advanced Semiconductor Devices and Mircosystems : [Proceedings] - IEEE, 2012. - ISBN 978-1-4673-1198-4978-1-4673-1197-7978-1-4673-1196-0 - doi:10.1109/ASDAM.2012.6418553
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000153293 520__ $$aWe have developed and characterized ultrafast and highly sensitive photodetectors based on GaAs nanowhiskers fabricated with an improved top-down etching method. We evaluated the material properties of the etched nanowhiskers by micro photoluminescence measurements and studied the effect of post annealing on nanowhiskers' luminescence. The nanowhiskers were integrated into the coplanar striplines for device testing using DC and time-resolved electro-optic characterization techniques. Our photodetectors exhibit a very low dark current below 500 pA at 10 V bias as well as a high responsivity of 0.19 A/W at 30 V, and a cut-off frequency of 1.3 THz. These characteristics make the GaAs nanowhisker photodetectors very promising candidates for high-speed optoelectronics and efficient THz emitters. © 2012 IEEE.
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000153293 7001_ $$0P:(DE-HGF)0$$aZhang, J.$$b1
000153293 7001_ $$0P:(DE-HGF)0$$aSobolewski, R.$$b2
000153293 7001_ $$0P:(DE-Juel1)130495$$aAdam, Roman$$b3$$ufzj
000153293 7001_ $$0P:(DE-HGF)0$$aJuul, L.$$b4
000153293 7001_ $$0P:(DE-HGF)0$$aMarso, M.$$b5
000153293 7001_ $$0P:(DE-Juel1)144014$$aWinden, A.$$b6$$ufzj
000153293 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, H.$$b7$$ufzj
000153293 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b8$$ufzj
000153293 7001_ $$0P:(DE-HGF)0$$aKordos, P.$$b9
000153293 773__ $$a10.1109/ASDAM.2012.6418553
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000153293 9132_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
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