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@INPROCEEDINGS{Mikulics:153293,
      author       = {Mikulics, M. and Zhang, J. and Sobolewski, R. and Adam,
                      Roman and Juul, L. and Marso, M. and Winden, A. and
                      Hardtdegen, H. and Grützmacher, Detlev and Kordos, P.},
      title        = {{G}a{A}s nanowhiskers for femtosecond photodetectors and
                      {TH}z emitters},
      publisher    = {IEEE},
      reportid     = {FZJ-2014-02936},
      pages        = {71-74},
      year         = {2012},
      comment      = {The Ninth International Conference on Advanced
                      Semiconductor Devices and Mircosystems : [Proceedings] -
                      IEEE, 2012. - ISBN
                      978-1-4673-1198-4978-1-4673-1197-7978-1-4673-1196-0 -
                      doi:10.1109/ASDAM.2012.6418553},
      booktitle     = {The Ninth International Conference on
                       Advanced Semiconductor Devices and
                       Mircosystems : [Proceedings] - IEEE,
                       2012. - ISBN
                       978-1-4673-1198-4978-1-4673-1197-7978-1-4673-1196-0
                       - doi:10.1109/ASDAM.2012.6418553},
      abstract     = {We have developed and characterized ultrafast and highly
                      sensitive photodetectors based on GaAs nanowhiskers
                      fabricated with an improved top-down etching method. We
                      evaluated the material properties of the etched nanowhiskers
                      by micro photoluminescence measurements and studied the
                      effect of post annealing on nanowhiskers' luminescence. The
                      nanowhiskers were integrated into the coplanar striplines
                      for device testing using DC and time-resolved electro-optic
                      characterization techniques. Our photodetectors exhibit a
                      very low dark current below 500 pA at 10 V bias as well as a
                      high responsivity of 0.19 A/W at 30 V, and a cut-off
                      frequency of 1.3 THz. These characteristics make the GaAs
                      nanowhisker photodetectors very promising candidates for
                      high-speed optoelectronics and efficient THz emitters. ©
                      2012 IEEE.},
      month         = {Nov},
      date          = {2012-11-11},
      organization  = {2012 International Conference on
                       Advanced Semiconductor Devices $\&$
                       Microsystems (ASDAM), Smolenice
                       (Slovakia), 11 Nov 2012 - 15 Nov 2012},
      cin          = {PGI-9 / JARA-FIT},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {423 - Sensorics and bioinspired systems (POF2-423)},
      pid          = {G:(DE-HGF)POF2-423},
      typ          = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7},
      doi          = {10.1109/ASDAM.2012.6418553},
      url          = {https://juser.fz-juelich.de/record/153293},
}