TY  - JOUR
AU  - Schäfer, A.
AU  - Besmehn, A.
AU  - Luysberg, M.
AU  - Winden, A.
AU  - Stoica, T.
AU  - Schnee, M.
AU  - Zander, W.
AU  - Niu, G.
AU  - Schroeder, T.
AU  - Mantl, S.
AU  - Hardtdegen, H.
AU  - Mikulics, M.
AU  - Schubert, J.
TI  - Hexagonal GdScO 3 : an epitaxial high-κ dielectric for GaN
JO  - Semiconductor science and technology
VL  - 29
IS  - 7
SN  - 1361-6641
CY  - Bristol
PB  - IOP Publ.
M1  - FZJ-2014-02947
SP  - 075005 
PY  - 2014
AB  - GdScO3 was deposited by pulsed laser deposition on two different templates suitable for III-Ngrowth: metalorganic vapour phase epitaxial GaN (0 0 0 1) on sapphire and molecular beamepitaxial Y2O3 on Si (1 1 1). The structure and crystallinity of the layers were determined aswell as the band gap and permittivity of the material. It was found that GdScO3 growsepitaxially and crystallizes hexagonally in contrast to the usually found orthorhombic oramorphous phases. A band gap and permittivity κ of 5.2 eV and 24 were found, respectively,making GdScO3 a promising epitaxial gate dielectric for III-N transistor applications.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000337356600006
DO  - DOI:10.1088/0268-1242/29/7/075005
UR  - https://juser.fz-juelich.de/record/153304
ER  -