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024 7 _ |a 10.1088/0268-1242/29/7/075005
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024 7 _ |a 1361-6641
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037 _ _ |a FZJ-2014-02947
082 _ _ |a 530
100 1 _ |a Schäfer, A.
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245 _ _ |a Hexagonal GdScO 3 : an epitaxial high-κ dielectric for GaN
260 _ _ |a Bristol
|c 2014
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336 7 _ |a Journal Article
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520 _ _ |a GdScO3 was deposited by pulsed laser deposition on two different templates suitable for III-Ngrowth: metalorganic vapour phase epitaxial GaN (0 0 0 1) on sapphire and molecular beamepitaxial Y2O3 on Si (1 1 1). The structure and crystallinity of the layers were determined aswell as the band gap and permittivity of the material. It was found that GdScO3 growsepitaxially and crystallizes hexagonally in contrast to the usually found orthorhombic oramorphous phases. A band gap and permittivity κ of 5.2 eV and 24 were found, respectively,making GdScO3 a promising epitaxial gate dielectric for III-N transistor applications.
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700 1 _ |a Besmehn, A.
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700 1 _ |a Luysberg, M.
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700 1 _ |a Winden, A.
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700 1 _ |a Stoica, T.
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700 1 _ |a Schnee, M.
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700 1 _ |a Zander, W.
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700 1 _ |a Niu, G.
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700 1 _ |a Schroeder, T.
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700 1 _ |a Mantl, S.
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700 1 _ |a Hardtdegen, H.
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700 1 _ |a Mikulics, M.
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700 1 _ |a Schubert, J.
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773 _ _ |a 10.1088/0268-1242/29/7/075005
|g Vol. 29, no. 7, p. 075005 -
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856 4 _ |u https://juser.fz-juelich.de/record/153304/files/FZJ-2014-02947.pdf
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