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@ARTICLE{Posseik:153643,
author = {Posseik, Francois and Ksari, Y. and Lin, Y. P. and Porte,
L. and Themlin, J.-M.},
title = {{I}nteraction of {C}$_{60}$ with clean and hydrogenated
{S}i{C}-(3×3) probed through the unoccupied electronic
states},
journal = {Physical review / B},
volume = {88},
number = {12},
issn = {1098-0121},
address = {College Park, Md.},
publisher = {APS},
reportid = {FZJ-2014-03148},
pages = {125421},
year = {2013},
abstract = {The effect of hydrogenation on the conduction bands of the
Si-rich 6H-SiC(0001)-(3×3) reconstruction is studied using
inverse photoemission spectroscopy in order to distinguish
surface from bulk states. These results are exploited for
the comparative study of the interaction of C60 adsorbed on
(3×3) and on hydrogen-terminated (3×3). For the latter, as
in the case of hydrogen-terminated Si, C60 is electronically
decoupled from the substrate. Upon annealing a C60 thick
film deposited on hydrogenated (3×3) up to 670 K, there is
a hint for a possible hydrogen transfer to the C60
molecules. The initially physisorbed molecules then adopt
covalent bonding with Si, forming the contact layer. Part of
the substrate is already found uncovered at this
temperature. By further annealing up to 860 K all H atoms
have desorbed. Finally, at 1100 K the remaining covalently
bound C60 have desorbed. Unexpectedly, the structural
damages caused by H and C60 deposition and by the successive
annealing steps do not prevent a final restoration of the
initial (3×3) reconstruction at about 1100 K.},
cin = {PGI-3},
ddc = {530},
cid = {I:(DE-Juel1)PGI-3-20110106},
pnm = {424 - Exploratory materials and phenomena (POF2-424)},
pid = {G:(DE-HGF)POF2-424},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000324486400005},
doi = {10.1103/PhysRevB.88.125421},
url = {https://juser.fz-juelich.de/record/153643},
}