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000153673 0247_ $$2doi$$a10.1557/opl.2012.196
000153673 0247_ $$2ISSN$$a1946-4274
000153673 0247_ $$2ISSN$$a0272-9172
000153673 037__ $$aFZJ-2014-03177
000153673 041__ $$aEnglish
000153673 082__ $$a670
000153673 1001_ $$0P:(DE-Juel1)128637$$aStoica, Toma$$b0$$eCorresponding Author$$ufzj
000153673 1112_ $$a2011 MRS Fall Meeting$$cBoston$$d2011-11-28 - 2011-12-02$$wUSA
000153673 245__ $$aPhotoluminescence and Raman scattering studies of GaN nanowires obtained by top-down and bottom-up approaches
000153673 260__ $$aWarrendale, Pa.$$bMRS$$c2012
000153673 300__ $$a29-34
000153673 3367_ $$0PUB:(DE-HGF)8$$2PUB:(DE-HGF)$$aContribution to a conference proceedings$$bcontrib$$mcontrib$$s1400152551_4092
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000153673 520__ $$aWe present comparative studies of optical properties of GaN nanowires (NWs) obtained by two different self-formation techniques: Plasma-Assisted Molecular Beam Epitaxy (PAMBE) growth; and plasma etching of GaN layers deposited by Metal-Organic Vapor Phase Epitaxy (MOVPE). The effects of the coalescence process on grown NW and plasma-induced defects in etched NWs have been studied by photoluminescence (PL) and Raman scattering. In MBE grown NWs, the coalescence-associated defects are extended toward the NW top for intermediate Ga flux. Using High Resolution Electron Microscopy of reactive plasma etching (RIE) NWs, it was found that NWs obtained with an optimal combination of inductive (ICP) and capacitive (RF) plasma are free of extended structural defects. The PL efficiency is strongly increased in plasma etched NWs. However, plasma-induced point defects have to be taken into account for explaining the changes of the PL spectra. Less plasma-induced degradation is observed for high ICP/RF power ratios. © 2012 Materials Research Society.
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000153673 7001_ $$0P:(DE-HGF)0$$aHaab, Anna$$b1
000153673 7001_ $$0P:(DE-HGF)0$$aGriesche, David$$b2
000153673 7001_ $$0P:(DE-Juel1)128613$$aMikulics, Martin$$b3$$ufzj
000153673 7001_ $$0P:(DE-HGF)0$$aLimbach, Friederich$$b4
000153673 7001_ $$0P:(DE-HGF)0$$aSchumann, Timo$$b5
000153673 7001_ $$0P:(DE-HGF)0$$aGotschke, Tobias$$b6
000153673 7001_ $$0P:(DE-HGF)0$$aSutter, Eli$$b7
000153673 7001_ $$0P:(DE-HGF)0$$aCalarco, Raffaella$$b8
000153673 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, Hilde$$b9$$ufzj
000153673 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b10$$ufzj
000153673 773__ $$0PERI:(DE-600)2451008-7$$a10.1557/opl.2012.196$$gVol. 1408, p. mrsf11-1408-bb20-14$$p29-34$$tMRS online proceedings library$$v1408$$x1946-4274$$y2012
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000153673 9132_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
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000153673 9141_ $$y2014
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