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@INPROCEEDINGS{Stoica:153673,
      author       = {Stoica, Toma and Haab, Anna and Griesche, David and
                      Mikulics, Martin and Limbach, Friederich and Schumann, Timo
                      and Gotschke, Tobias and Sutter, Eli and Calarco, Raffaella
                      and Hardtdegen, Hilde and Grützmacher, Detlev},
      title        = {{P}hotoluminescence and {R}aman scattering studies of
                      {G}a{N} nanowires obtained by top-down and bottom-up
                      approaches},
      journal      = {MRS online proceedings library},
      volume       = {1408},
      issn         = {1946-4274},
      address      = {Warrendale, Pa.},
      publisher    = {MRS},
      reportid     = {FZJ-2014-03177},
      pages        = {29-34},
      year         = {2012},
      abstract     = {We present comparative studies of optical properties of GaN
                      nanowires (NWs) obtained by two different self-formation
                      techniques: Plasma-Assisted Molecular Beam Epitaxy (PAMBE)
                      growth; and plasma etching of GaN layers deposited by
                      Metal-Organic Vapor Phase Epitaxy (MOVPE). The effects of
                      the coalescence process on grown NW and plasma-induced
                      defects in etched NWs have been studied by photoluminescence
                      (PL) and Raman scattering. In MBE grown NWs, the
                      coalescence-associated defects are extended toward the NW
                      top for intermediate Ga flux. Using High Resolution Electron
                      Microscopy of reactive plasma etching (RIE) NWs, it was
                      found that NWs obtained with an optimal combination of
                      inductive (ICP) and capacitive (RF) plasma are free of
                      extended structural defects. The PL efficiency is strongly
                      increased in plasma etched NWs. However, plasma-induced
                      point defects have to be taken into account for explaining
                      the changes of the PL spectra. Less plasma-induced
                      degradation is observed for high ICP/RF power ratios. ©
                      2012 Materials Research Society.},
      month         = {Nov},
      date          = {2011-11-28},
      organization  = {2011 MRS Fall Meeting, Boston (USA),
                       28 Nov 2011 - 2 Dec 2011},
      cin          = {PGI-9},
      ddc          = {670},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)8 / PUB:(DE-HGF)16},
      doi          = {10.1557/opl.2012.196},
      url          = {https://juser.fz-juelich.de/record/153673},
}