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@ARTICLE{Szade:15385,
author = {Szade, J. and Szot, K. and Kulpa, M. and Kubacki, J. and
Lenser, Ch. and Dittmann, R. and Waser, R.},
title = {{E}lectronic structure of epitaxial {F}e-doped {S}r{T}i{O}3
thin films},
journal = {Phase transitions},
volume = {84},
issn = {0141-1594},
address = {London [u.a.]},
publisher = {Taylor $\&$ Francis},
reportid = {PreJuSER-15385},
year = {2011},
note = {This study was supported by the NCBiR within the project
NCBiR/ERA-NET-MATERA/3/2009.},
abstract = {X-ray photoelectron spectroscopy has been applied to study
the electronic structure of the epitaxial Fe-doped SrTiO3
thin films with an Fe concentration of 1 and 2 $at\%.$ The
results were compared to undoped thin films and lightly
Fe-doped single crystal of SrTiO3. Fe doping was found to
increase the amount of the in-gap states which can be
related to the increased ability of Fe-doped thin films to
exhibit resistive switching behaviour. Core level analysis
indicates the mixed-valence character of Fe atoms in the
films, with a divalent contribution situated on the
surface.},
keywords = {J (WoSType)},
cin = {JARA-FIT / PGI-7},
ddc = {540},
cid = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-7-20110106},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Crystallography / Physics, Condensed Matter},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000290399800008},
doi = {10.1080/01411594.2010.551806},
url = {https://juser.fz-juelich.de/record/15385},
}