%0 Journal Article
%A Faley, Michael
%A Meertens, Doris
%A Dunin-Borkowski, Rafal
%A Poppe, U.
%T Graphoepitaxial high-T$_{c}$ SQUIDS
%J Journal of physics / Conference Series
%V 507
%@ 1742-6588
%C Bristol
%I IOP Publ.
%M FZJ-2014-03348
%P 042009
%D 2014
%X The fabrication process and physical properties of graphoepitaxially engineered high-Tc direct current superconducting quantum interferometer devices (DC SQUIDs) are studied. Double buffer layers, each comprising a graphoepitaxial seed layer of YBa2Cu3O7−x and an epitaxial blocking layer of SrTiO3, were deposited over textured step edges on (001) surfaces of MgO substrates. Scanning electron microscopy and high-resolution transmission electron microscopy were used to investigate the microstructural properties of DC SQUIDs with graphoepitaxial Josephson junctions. Both direct coupled and inductively coupled high-Tc DC SQUIDs with graphoepitaxial step edge junctions and flux transformers were studied.
%F PUB:(DE-HGF)16
%9 Journal Article
%U https://juser.fz-juelich.de/record/153869