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000153869 1001_ $$0P:(DE-Juel1)130633$$aFaley, Michael$$b0$$eCorresponding Author
000153869 245__ $$aGraphoepitaxial high-T$_{c}$ SQUIDS
000153869 260__ $$aBristol$$bIOP Publ.$$c2014
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000153869 520__ $$aThe fabrication process and physical properties of graphoepitaxially engineered high-Tc direct current superconducting quantum interferometer devices (DC SQUIDs) are studied. Double buffer layers, each comprising a graphoepitaxial seed layer of YBa2Cu3O7−x and an epitaxial blocking layer of SrTiO3, were deposited over textured step edges on (001) surfaces of MgO substrates. Scanning electron microscopy and high-resolution transmission electron microscopy were used to investigate the microstructural properties of DC SQUIDs with graphoepitaxial Josephson junctions. Both direct coupled and inductively coupled high-Tc DC SQUIDs with graphoepitaxial step edge junctions and flux transformers were studied.
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000153869 7001_ $$0P:(DE-Juel1)130828$$aMeertens, Doris$$b1
000153869 7001_ $$0P:(DE-Juel1)144121$$aDunin-Borkowski, Rafal$$b2
000153869 7001_ $$0P:(DE-Juel1)130898$$aPoppe, U.$$b3$$ufzj
000153869 773__ $$0PERI:(DE-600)2166409-2$$p042009$$tJournal of physics / Conference Series$$v507$$x1742-6588$$y2014
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000153869 9141_ $$y2014
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