TY  - JOUR
AU  - Kärkkänen, Irina
AU  - Shkabko, Andrey
AU  - Heikkilä, Mikko
AU  - Niinistö, Jaakko
AU  - Ritala, Mikko
AU  - Leskelä, Markku
AU  - Hoffmann-Eifert, Susanne
AU  - Waser, R.
TI  - Study of atomic layer deposited ZrO 2 and ZrO 2 /TiO 2 films for resistive switching application
JO  - Physica status solidi / A
VL  - 211
IS  - 2
SN  - 1862-6300
CY  - Weinheim
PB  - Wiley-VCH
M1  - FZJ-2014-03494
SP  - 301 - 309
PY  - 2014
AB  - Thin ZrO2 films and ZrO2/TiO2 bilayers grown by atomic layer deposition (ALD) are integrated into metal–oxide–metal (MOM) structures for investigation of resistive switching (RS) properties. The films have different microstructure depending on the used ALD oxygen source and stacking sequence for the bilayers. Pt/ZrO2/Ti/Pt devices show unipolar RS for oxide thicknesses of 11–18 nm. The devices with O3 grown ZrO2 show higher yield in comparison to the ones with H2O processed oxide. The switching polarity of the Pt/ZrO2/Ti/Pt cells depends on the thickness of the Ti electrode layer. The increase of the Ti layer thickness leads to a change in switching polarity from unipolar to bipolar. The formation of ZrO2/TiO2 bilayers results in changes in the RS behavior of the MOM cells depending on the stacking sequence.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000332000500008
DO  - DOI:10.1002/pssa.201330034
UR  - https://juser.fz-juelich.de/record/154092
ER  -