% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Krkknen:154092,
      author       = {Kärkkänen, Irina and Shkabko, Andrey and Heikkilä, Mikko
                      and Niinistö, Jaakko and Ritala, Mikko and Leskelä, Markku
                      and Hoffmann-Eifert, Susanne and Waser, R.},
      title        = {{S}tudy of atomic layer deposited {Z}r{O} 2 and {Z}r{O} 2
                      /{T}i{O} 2 films for resistive switching application},
      journal      = {Physica status solidi / A},
      volume       = {211},
      number       = {2},
      issn         = {1862-6300},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2014-03494},
      pages        = {301 - 309},
      year         = {2014},
      abstract     = {Thin ZrO2 films and ZrO2/TiO2 bilayers grown by atomic
                      layer deposition (ALD) are integrated into
                      metal–oxide–metal (MOM) structures for investigation of
                      resistive switching (RS) properties. The films have
                      different microstructure depending on the used ALD oxygen
                      source and stacking sequence for the bilayers. Pt/ZrO2/Ti/Pt
                      devices show unipolar RS for oxide thicknesses of
                      11–18 nm. The devices with O3 grown ZrO2 show higher
                      yield in comparison to the ones with H2O processed oxide.
                      The switching polarity of the Pt/ZrO2/Ti/Pt cells depends on
                      the thickness of the Ti electrode layer. The increase of the
                      Ti layer thickness leads to a change in switching polarity
                      from unipolar to bipolar. The formation of ZrO2/TiO2
                      bilayers results in changes in the RS behavior of the MOM
                      cells depending on the stacking sequence.},
      cin          = {PGI-7},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {424 - Exploratory materials and phenomena (POF2-424)},
      pid          = {G:(DE-HGF)POF2-424},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000332000500008},
      doi          = {10.1002/pssa.201330034},
      url          = {https://juser.fz-juelich.de/record/154092},
}