000154093 001__ 154093
000154093 005__ 20210129213832.0
000154093 0247_ $$2doi$$a10.1002/pssa.201330101
000154093 0247_ $$2ISSN$$a1862-6319
000154093 0247_ $$2ISSN$$a0031-8965
000154093 0247_ $$2ISSN$$a1862-6300
000154093 0247_ $$2ISSN$$a1521-396X
000154093 0247_ $$2WOS$$aWOS:000332000500020
000154093 037__ $$aFZJ-2014-03495
000154093 082__ $$a530
000154093 1001_ $$0P:(DE-Juel1)140489$$aAslam, N.$$b0$$eCorresponding Author$$ufzj
000154093 245__ $$aInfluence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD Sr x Ti y O z films
000154093 260__ $$aWeinheim$$bWiley-VCH$$c2014
000154093 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1403102517_30228
000154093 3367_ $$2DataCite$$aOutput Types/Journal article
000154093 3367_ $$00$$2EndNote$$aJournal Article
000154093 3367_ $$2BibTeX$$aARTICLE
000154093 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000154093 3367_ $$2DRIVER$$aarticle
000154093 520__ $$aStrontium titanate, SrxTiyOz (STO), thin films with various cation stoichiometries were deposited by plasma-assisted atomic layer deposition (ALD) using cyclopentadienyl-based metal precursors and oxygen plasma as counter-reactant. [Sr]/([Sr] + [Ti]) compositions ranging from 0.46 to 0.57 were obtained by changing the (SrO)/(TiO2) ALD cycle ratios. As-deposited 15–30 nm thick SrxTiyOz films prepared at 350 °C on Pt-coated silicon substrates were amorphous. Post-annealing at 600/650 °C for 10 min under N2 gas resulted in a crystallization into the perovskite phase. Stoichiometric STO and Sr-rich STO films exhibited a certain degree of (111) texture while the Ti-rich STO films showed a lower degree of crystallization. Crystallized layers exhibited a smaller band gap Eg than amorphous ones, while within the stoichiometry series the value of Eg increased with increasing Sr-content. Within the stoichiometry series Pt/STO/Pt structures with Sr-rich STO films showed the lowest leakage current densities. At 1.0 V values of about 2 × 10−8 and 5 × 10−6 A cm−2 were obtained for the as-deposited and the annealed films, respectively. Highest capacitance density was obtained for 15 nm polycrystalline stoichiometric SrTiO3 films resulting in a capacitor equivalent thickness CET of about 0.7 nm. Pt/SrxTiyOz/Pt capacitors with the STO being in amorphous state exhibited a positive voltage nonlinearity factor α of about 400 ppm V−2, while the negative α-values for crystallized films showed a systematic variation with the stoichiometry, the degree of crystallization and the thickness of the STO layer. This demonstrates that a broad performance range of MIM capacitors is accessible by controlling the stoichiometry and the degree of crystallization of plasma-assisted ALD SrxTiyOz thin films.
000154093 536__ $$0G:(DE-HGF)POF2-424$$a424 - Exploratory materials and phenomena (POF2-424)$$cPOF2-424$$fPOF II$$x0
000154093 588__ $$aDataset connected to CrossRef, juser.fz-juelich.de
000154093 7001_ $$0P:(DE-HGF)0$$aLongo, V.$$b1
000154093 7001_ $$0P:(DE-HGF)0$$aKeuning, W.$$b2
000154093 7001_ $$0P:(DE-HGF)0$$aRoozeboom, F.$$b3
000154093 7001_ $$0P:(DE-HGF)0$$aKessels, W. M. M.$$b4
000154093 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b5$$ufzj
000154093 7001_ $$0P:(DE-Juel1)130717$$aHoffmann-Eifert, S.$$b6$$ufzj
000154093 773__ $$0PERI:(DE-600)1481091-8$$a10.1002/pssa.201330101$$gVol. 211, no. 2, p. 389 - 396$$n2$$p389 - 396$$tPhysica status solidi / A$$v211$$x1862-6300$$y2014
000154093 8564_ $$uhttps://juser.fz-juelich.de/record/154093/files/FZJ-2014-03495.pdf$$yRestricted$$zPublished final document.
000154093 909CO $$ooai:juser.fz-juelich.de:154093$$pVDB
000154093 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)140489$$aForschungszentrum Jülich GmbH$$b0$$kFZJ
000154093 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)131022$$aForschungszentrum Jülich GmbH$$b5$$kFZJ
000154093 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130717$$aForschungszentrum Jülich GmbH$$b6$$kFZJ
000154093 9132_ $$0G:(DE-HGF)POF3-524$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Collective States$$x0
000154093 9131_ $$0G:(DE-HGF)POF2-424$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vExploratory materials and phenomena$$x0
000154093 9141_ $$y2014
000154093 915__ $$0StatID:(DE-HGF)0010$$2StatID$$aJCR/ISI refereed
000154093 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR
000154093 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000154093 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000154093 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000154093 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000154093 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000154093 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000154093 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000154093 915__ $$0StatID:(DE-HGF)1040$$2StatID$$aDBCoverage$$bZoological Record
000154093 9201_ $$0I:(DE-Juel1)PGI-7-20110106$$kPGI-7$$lElektronische Materialien$$x0
000154093 980__ $$ajournal
000154093 980__ $$aVDB
000154093 980__ $$aI:(DE-Juel1)PGI-7-20110106
000154093 980__ $$aUNRESTRICTED