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@ARTICLE{Aslam:154093,
      author       = {Aslam, N. and Longo, V. and Keuning, W. and Roozeboom, F.
                      and Kessels, W. M. M. and Waser, R. and Hoffmann-Eifert, S.},
      title        = {{I}nfluence of stoichiometry on the performance of {MIM}
                      capacitors from plasma-assisted {ALD} {S}r x {T}i y {O} z
                      films},
      journal      = {Physica status solidi / A},
      volume       = {211},
      number       = {2},
      issn         = {1862-6300},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2014-03495},
      pages        = {389 - 396},
      year         = {2014},
      abstract     = {Strontium titanate, SrxTiyOz (STO), thin films with various
                      cation stoichiometries were deposited by plasma-assisted
                      atomic layer deposition (ALD) using cyclopentadienyl-based
                      metal precursors and oxygen plasma as counter-reactant.
                      [Sr]/([Sr] + [Ti]) compositions ranging from 0.46 to
                      0.57 were obtained by changing the (SrO)/(TiO2) ALD cycle
                      ratios. As-deposited 15–30 nm thick SrxTiyOz films
                      prepared at 350 °C on Pt-coated silicon substrates were
                      amorphous. Post-annealing at 600/650 °C for 10 min
                      under N2 gas resulted in a crystallization into the
                      perovskite phase. Stoichiometric STO and Sr-rich STO films
                      exhibited a certain degree of (111) texture while the
                      Ti-rich STO films showed a lower degree of crystallization.
                      Crystallized layers exhibited a smaller band gap Eg than
                      amorphous ones, while within the stoichiometry series the
                      value of Eg increased with increasing Sr-content. Within the
                      stoichiometry series Pt/STO/Pt structures with Sr-rich STO
                      films showed the lowest leakage current densities. At
                      1.0 V values of about 2 × 10−8 and
                      5 × 10−6 A cm−2 were obtained for the
                      as-deposited and the annealed films, respectively. Highest
                      capacitance density was obtained for 15 nm polycrystalline
                      stoichiometric SrTiO3 films resulting in a capacitor
                      equivalent thickness CET of about 0.7 nm. Pt/SrxTiyOz/Pt
                      capacitors with the STO being in amorphous state exhibited a
                      positive voltage nonlinearity factor α of about
                      400 ppm V−2, while the negative α-values for
                      crystallized films showed a systematic variation with the
                      stoichiometry, the degree of crystallization and the
                      thickness of the STO layer. This demonstrates that a broad
                      performance range of MIM capacitors is accessible by
                      controlling the stoichiometry and the degree of
                      crystallization of plasma-assisted ALD SrxTiyOz thin films.},
      cin          = {PGI-7},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {424 - Exploratory materials and phenomena (POF2-424)},
      pid          = {G:(DE-HGF)POF2-424},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000332000500020},
      doi          = {10.1002/pssa.201330101},
      url          = {https://juser.fz-juelich.de/record/154093},
}