Gast ::
| Hauptseite > Publikationsdatenbank > Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD Sr x Ti y O z films > print |
| Hauptseite > Publikationsdatenbank > Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD Sr x Ti y O z films > print |
| 001 | 154093 | ||
| 005 | 20210129213832.0 | ||
| 024 | 7 | _ | |a 10.1002/pssa.201330101 |2 doi |
| 024 | 7 | _ | |a 1862-6319 |2 ISSN |
| 024 | 7 | _ | |a 0031-8965 |2 ISSN |
| 024 | 7 | _ | |a 1862-6300 |2 ISSN |
| 024 | 7 | _ | |a 1521-396X |2 ISSN |
| 024 | 7 | _ | |a WOS:000332000500020 |2 WOS |
| 037 | _ | _ | |a FZJ-2014-03495 |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |a Aslam, N. |0 P:(DE-Juel1)140489 |b 0 |e Corresponding Author |u fzj |
| 245 | _ | _ | |a Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD Sr x Ti y O z films |
| 260 | _ | _ | |a Weinheim |c 2014 |b Wiley-VCH |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1403102517_30228 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 520 | _ | _ | |a Strontium titanate, SrxTiyOz (STO), thin films with various cation stoichiometries were deposited by plasma-assisted atomic layer deposition (ALD) using cyclopentadienyl-based metal precursors and oxygen plasma as counter-reactant. [Sr]/([Sr] + [Ti]) compositions ranging from 0.46 to 0.57 were obtained by changing the (SrO)/(TiO2) ALD cycle ratios. As-deposited 15–30 nm thick SrxTiyOz films prepared at 350 °C on Pt-coated silicon substrates were amorphous. Post-annealing at 600/650 °C for 10 min under N2 gas resulted in a crystallization into the perovskite phase. Stoichiometric STO and Sr-rich STO films exhibited a certain degree of (111) texture while the Ti-rich STO films showed a lower degree of crystallization. Crystallized layers exhibited a smaller band gap Eg than amorphous ones, while within the stoichiometry series the value of Eg increased with increasing Sr-content. Within the stoichiometry series Pt/STO/Pt structures with Sr-rich STO films showed the lowest leakage current densities. At 1.0 V values of about 2 × 10−8 and 5 × 10−6 A cm−2 were obtained for the as-deposited and the annealed films, respectively. Highest capacitance density was obtained for 15 nm polycrystalline stoichiometric SrTiO3 films resulting in a capacitor equivalent thickness CET of about 0.7 nm. Pt/SrxTiyOz/Pt capacitors with the STO being in amorphous state exhibited a positive voltage nonlinearity factor α of about 400 ppm V−2, while the negative α-values for crystallized films showed a systematic variation with the stoichiometry, the degree of crystallization and the thickness of the STO layer. This demonstrates that a broad performance range of MIM capacitors is accessible by controlling the stoichiometry and the degree of crystallization of plasma-assisted ALD SrxTiyOz thin films. |
| 536 | _ | _ | |a 424 - Exploratory materials and phenomena (POF2-424) |0 G:(DE-HGF)POF2-424 |c POF2-424 |f POF II |x 0 |
| 588 | _ | _ | |a Dataset connected to CrossRef, juser.fz-juelich.de |
| 700 | 1 | _ | |a Longo, V. |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Keuning, W. |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Roozeboom, F. |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Kessels, W. M. M. |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Waser, R. |0 P:(DE-Juel1)131022 |b 5 |u fzj |
| 700 | 1 | _ | |a Hoffmann-Eifert, S. |0 P:(DE-Juel1)130717 |b 6 |u fzj |
| 773 | _ | _ | |a 10.1002/pssa.201330101 |g Vol. 211, no. 2, p. 389 - 396 |0 PERI:(DE-600)1481091-8 |n 2 |p 389 - 396 |t Physica status solidi / A |v 211 |y 2014 |x 1862-6300 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/154093/files/FZJ-2014-03495.pdf |z Published final document. |y Restricted |
| 909 | C | O | |o oai:juser.fz-juelich.de:154093 |p VDB |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 0 |6 P:(DE-Juel1)140489 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 5 |6 P:(DE-Juel1)131022 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 6 |6 P:(DE-Juel1)130717 |
| 913 | 2 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-524 |2 G:(DE-HGF)POF3-500 |v Controlling Collective States |x 0 |
| 913 | 1 | _ | |a DE-HGF |b Schlüsseltechnologien |1 G:(DE-HGF)POF2-420 |0 G:(DE-HGF)POF2-424 |2 G:(DE-HGF)POF2-400 |v Exploratory materials and phenomena |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF2 |l Grundlagen zukünftiger Informationstechnologien |
| 914 | 1 | _ | |y 2014 |
| 915 | _ | _ | |a JCR/ISI refereed |0 StatID:(DE-HGF)0010 |2 StatID |
| 915 | _ | _ | |a JCR |0 StatID:(DE-HGF)0100 |2 StatID |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0110 |2 StatID |b Science Citation Index |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0111 |2 StatID |b Science Citation Index Expanded |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0150 |2 StatID |b Web of Science Core Collection |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0199 |2 StatID |b Thomson Reuters Master Journal List |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0200 |2 StatID |b SCOPUS |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0300 |2 StatID |b Medline |
| 915 | _ | _ | |a Nationallizenz |0 StatID:(DE-HGF)0420 |2 StatID |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)1040 |2 StatID |b Zoological Record |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-7-20110106 |k PGI-7 |l Elektronische Materialien |x 0 |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 980 | _ | _ | |a UNRESTRICTED |
| Library | Collection | CLSMajor | CLSMinor | Language | Author |
|---|