TY  - JOUR
AU  - Gottlob, Daniel M.
AU  - Jansen, Thomas
AU  - Hoppe, Michael
AU  - Bürgler, Daniel E.
AU  - Schneider, Claus M.
TI  - Epitaxial Cu(001) films grown on a Cr/Ag/Fe/GaAs(001) buffer system
JO  - Thin solid films
VL  - 562
SN  - 0040-6090
CY  - Amsterdam [u.a.]
PB  - Elsevier
M1  - FZJ-2014-03509
SP  - 250 - 253
PY  - 2014
AB  - We present a procedure to prepare single-crystalline, high-purity Cu(001) films (templates) suitable as substrates for subsequent epitaxial thin-film growth. The template films were grown in a dedicated molecular-beam epitaxy system on a Cr/Ag/Fe/GaAs(001) buffer layer system. Low-energy electron diffraction and X-ray diffraction were applied to determine the surface orientation and the epitaxial relationship between all layers of the stack. Post-annealing at moderate temperatures enhances the quality of the film as shown by low-energy electron diffraction and atomic force microscopy. X-ray photoemission and Auger electron spectroscopy confirm that no atoms of the buffer layers diffuse into the Cu film during the initial preparation and the post-annealing treatment. The completed Cu(001) template system can be exposed to air and afterwards refurbished by Ar+-ion bombardment and annealing, enabling the transfer between vacuum systems. The procedure provides suitable conductive thin film templates for studies of epitaxial thin films, e.g. on the magnetic and magnetotransport properties of Co and Ni based films and multilayers.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000340658100039
DO  - DOI:10.1016/j.tsf.2014.04.078
UR  - https://juser.fz-juelich.de/record/154111
ER  -