000154112 001__ 154112
000154112 005__ 20210908140316.0
000154112 0247_ $$2doi$$a10.1063/1.4879260
000154112 0247_ $$2ISSN$$a1077-3118
000154112 0247_ $$2ISSN$$a0003-6951
000154112 0247_ $$2WOS$$aWOS:000337891200068
000154112 0247_ $$2Handle$$a2128/17325
000154112 0247_ $$2altmetric$$aaltmetric:2337960
000154112 037__ $$aFZJ-2014-03510
000154112 082__ $$a530
000154112 1001_ $$0P:(DE-HGF)0$$aSchaab, J.$$b0$$eCorresponding Author
000154112 245__ $$aImaging and characterization of conducting ferroelectric domain walls by photoemission electron microscopy
000154112 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2014
000154112 3367_ $$2DRIVER$$aarticle
000154112 3367_ $$2DataCite$$aOutput Types/Journal article
000154112 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1631078813_688
000154112 3367_ $$2BibTeX$$aARTICLE
000154112 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000154112 3367_ $$00$$2EndNote$$aJournal Article
000154112 520__ $$aHigh-resolution X-ray photoemission electron microscopy (X-PEEM) is a well-established methodfor imaging ferroelectric domain structures. Here, we expand the scope of application of X-PEEMand demonstrate its capability for imaging and investigating domain walls in ferroelectrics withhigh spatial resolution. Using ErMnO3 as test system, we show that ferroelectric domain walls canbe visualized based on photo-induced charging effects and local variations in their electronicconductance can be mapped by analyzing the energy distribution of photoelectrons. Our resultsopen the door for non-destructive, contact-free, and element-specific studies of the electronicand chemical structure at domain walls in ferroelectrics.
000154112 536__ $$0G:(DE-HGF)POF2-422$$a422 - Spin-based and quantum information (POF2-422)$$cPOF2-422$$fPOF II$$x0
000154112 588__ $$aDataset connected to CrossRef, juser.fz-juelich.de
000154112 7001_ $$0P:(DE-HGF)0$$aKrug, I. P.$$b1
000154112 7001_ $$0P:(DE-HGF)0$$aNickel, F.$$b2
000154112 7001_ $$0P:(DE-HGF)0$$aGottlob, D. M.$$b3
000154112 7001_ $$0P:(DE-Juel1)140485$$aDoğanay, H.$$b4
000154112 7001_ $$0P:(DE-HGF)0$$aCano, A.$$b5
000154112 7001_ $$0P:(DE-HGF)0$$aHentschel, M.$$b6
000154112 7001_ $$0P:(DE-HGF)0$$aYan, Z.$$b7
000154112 7001_ $$0P:(DE-HGF)0$$aBourret, E.$$b8
000154112 7001_ $$0P:(DE-Juel1)130948$$aSchneider, C. M.$$b9
000154112 7001_ $$0P:(DE-HGF)0$$aRamesh, R.$$b10
000154112 7001_ $$0P:(DE-HGF)0$$aMeier, D.$$b11
000154112 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.4879260$$gVol. 104, no. 23, p. 232904 -$$n23$$p232904 -$$tApplied physics letters$$v104$$x1077-3118$$y2014
000154112 8564_ $$uhttps://juser.fz-juelich.de/record/154112/files/FZJ-2014-03510.pdf$$yOpenAccess$$zPublished final document.
000154112 909CO $$ooai:juser.fz-juelich.de:154112$$pdnbdelivery$$pdriver$$pVDB$$popen_access$$popenaire
000154112 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)140485$$aForschungszentrum Jülich GmbH$$b4$$kFZJ
000154112 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130948$$aForschungszentrum Jülich GmbH$$b9$$kFZJ
000154112 9131_ $$0G:(DE-HGF)POF2-422$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vSpin-based and quantum information$$x0
000154112 9132_ $$0G:(DE-HGF)POF3-523$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Configuration-Based Phenomena$$x0
000154112 9141_ $$y2014
000154112 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000154112 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR
000154112 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000154112 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000154112 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000154112 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000154112 915__ $$0StatID:(DE-HGF)0010$$2StatID$$aJCR/ISI refereed
000154112 915__ $$0StatID:(DE-HGF)0400$$2StatID$$aAllianz-Lizenz / DFG
000154112 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000154112 915__ $$0StatID:(DE-HGF)1020$$2StatID$$aDBCoverage$$bCurrent Contents - Social and Behavioral Sciences
000154112 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000154112 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000154112 9201_ $$0I:(DE-Juel1)PGI-6-20110106$$kPGI-6$$lElektronische Eigenschaften$$x0
000154112 980__ $$ajournal
000154112 980__ $$aVDB
000154112 980__ $$aI:(DE-Juel1)PGI-6-20110106
000154112 980__ $$aUNRESTRICTED
000154112 9801_ $$aFullTexts