000154494 001__ 154494
000154494 005__ 20240708133735.0
000154494 0247_ $$2doi$$a10.1139/cjp-2013-0627
000154494 0247_ $$2ISSN$$a1208-6045
000154494 0247_ $$2ISSN$$a0008-4204
000154494 0247_ $$2WOS$$aWOS:000339379500046
000154494 0247_ $$2altmetric$$aaltmetric:2342163
000154494 037__ $$aFZJ-2014-03812
000154494 082__ $$a530
000154494 1001_ $$0P:(DE-Juel1)130233$$aDing, K.$$b0$$eCorresponding Author$$ufzj
000154494 245__ $$aImpact of doped microcrystalline silicon oxide layers on crystalline silicon surface passivation
000154494 260__ $$aOttawa, Ontario$$bNCR Research Press$$c2014
000154494 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1405488236_22674
000154494 3367_ $$2DataCite$$aOutput Types/Journal article
000154494 3367_ $$00$$2EndNote$$aJournal Article
000154494 3367_ $$2BibTeX$$aARTICLE
000154494 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000154494 3367_ $$2DRIVER$$aarticle
000154494 520__ $$aThis paper reports on a comparative study of the impact of phosphorous and boron doped microcrystalline silicon oxide (μc-SiOx:H) layers on the surface passivation of n- and p-type doped crystalline silicon float zone wafers in correlation with the material properties of the μc-SiOx:H layers. The poor surface passivation of μc-SiOx:H films deposited directly on c-Si surface might be attributed to the incorporation of doping impurities, the surface damaging by ion bombardment and (or) the low amount of hydrogen at the μc-SiOx:H/c-Si interface. The different impact of n- and p-type doped μc-SiOx:H films on the passivation of n- and p-type doped wafers with and without an additional a-SiOx:H passivation layer are correlated to the differences in the strength of the field effect at the heterojunction and to the presence of boron atoms that can cause the rupture of Si–H bonds.
000154494 536__ $$0G:(DE-HGF)POF2-111$$a111 - Thin Film Photovoltaics (POF2-111)$$cPOF2-111$$fPOF II$$x0
000154494 588__ $$aDataset connected to CrossRef, juser.fz-juelich.de
000154494 7001_ $$0P:(DE-Juel1)130210$$aAeberhard, U.$$b1$$ufzj
000154494 7001_ $$0P:(DE-Juel1)130263$$aLambertz, A.$$b2$$ufzj
000154494 7001_ $$0P:(DE-Juel1)130297$$aSmirnov, V.$$b3$$ufzj
000154494 7001_ $$0P:(DE-Juel1)125595$$aHolländer, B.$$b4$$ufzj
000154494 7001_ $$0P:(DE-Juel1)130238$$aFinger, F.$$b5$$ufzj
000154494 7001_ $$0P:(DE-Juel1)143905$$aRau, U.$$b6$$ufzj
000154494 773__ $$0PERI:(DE-600)2021497-2$$a10.1139/cjp-2013-0627$$gVol. 92, no. 7/8, p. 758 - 762$$n7/8$$p758 - 762$$tCanadian journal of physics$$v92$$x1208-6045$$y2014
000154494 909CO $$ooai:juser.fz-juelich.de:154494$$pVDB
000154494 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130233$$aForschungszentrum Jülich GmbH$$b0$$kFZJ
000154494 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130210$$aForschungszentrum Jülich GmbH$$b1$$kFZJ
000154494 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130263$$aForschungszentrum Jülich GmbH$$b2$$kFZJ
000154494 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130297$$aForschungszentrum Jülich GmbH$$b3$$kFZJ
000154494 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125595$$aForschungszentrum Jülich GmbH$$b4$$kFZJ
000154494 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130238$$aForschungszentrum Jülich GmbH$$b5$$kFZJ
000154494 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)143905$$aForschungszentrum Jülich GmbH$$b6$$kFZJ
000154494 9132_ $$0G:(DE-HGF)POF3-121$$1G:(DE-HGF)POF3-120$$2G:(DE-HGF)POF3-100$$aDE-HGF$$bForschungsbereich Energie$$lErneuerbare Energien$$vSolar cells of the next generation$$x0
000154494 9131_ $$0G:(DE-HGF)POF2-111$$1G:(DE-HGF)POF2-110$$2G:(DE-HGF)POF2-100$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bEnergie$$lErneuerbare Energien$$vThin Film Photovoltaics$$x0
000154494 9141_ $$y2014
000154494 915__ $$0StatID:(DE-HGF)0040$$2StatID$$aPeer review unknown
000154494 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR
000154494 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000154494 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000154494 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000154494 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000154494 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000154494 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000154494 915__ $$0StatID:(DE-HGF)1030$$2StatID$$aDBCoverage$$bCurrent Contents - Life Sciences
000154494 920__ $$lyes
000154494 9201_ $$0I:(DE-Juel1)IEK-5-20101013$$kIEK-5$$lPhotovoltaik$$x0
000154494 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x1
000154494 980__ $$ajournal
000154494 980__ $$aVDB
000154494 980__ $$aI:(DE-Juel1)IEK-5-20101013
000154494 980__ $$aI:(DE-Juel1)PGI-9-20110106
000154494 980__ $$aUNRESTRICTED
000154494 981__ $$aI:(DE-Juel1)IMD-3-20101013
000154494 981__ $$aI:(DE-Juel1)PGI-9-20110106