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@ARTICLE{Ding:154494,
      author       = {Ding, K. and Aeberhard, U. and Lambertz, A. and Smirnov, V.
                      and Holländer, B. and Finger, F. and Rau, U.},
      title        = {{I}mpact of doped microcrystalline silicon oxide layers on
                      crystalline silicon surface passivation},
      journal      = {Canadian journal of physics},
      volume       = {92},
      number       = {7/8},
      issn         = {1208-6045},
      address      = {Ottawa, Ontario},
      publisher    = {NCR Research Press},
      reportid     = {FZJ-2014-03812},
      pages        = {758 - 762},
      year         = {2014},
      abstract     = {This paper reports on a comparative study of the impact of
                      phosphorous and boron doped microcrystalline silicon oxide
                      (μc-SiOx:H) layers on the surface passivation of n- and
                      p-type doped crystalline silicon float zone wafers in
                      correlation with the material properties of the μc-SiOx:H
                      layers. The poor surface passivation of μc-SiOx:H films
                      deposited directly on c-Si surface might be attributed to
                      the incorporation of doping impurities, the surface damaging
                      by ion bombardment and (or) the low amount of hydrogen at
                      the μc-SiOx:H/c-Si interface. The different impact of n-
                      and p-type doped μc-SiOx:H films on the passivation of n-
                      and p-type doped wafers with and without an additional
                      a-SiOx:H passivation layer are correlated to the differences
                      in the strength of the field effect at the heterojunction
                      and to the presence of boron atoms that can cause the
                      rupture of Si–H bonds.},
      cin          = {IEK-5 / PGI-9},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-5-20101013 / I:(DE-Juel1)PGI-9-20110106},
      pnm          = {111 - Thin Film Photovoltaics (POF2-111)},
      pid          = {G:(DE-HGF)POF2-111},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000339379500046},
      doi          = {10.1139/cjp-2013-0627},
      url          = {https://juser.fz-juelich.de/record/154494},
}