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000154847 005__ 20210129213952.0
000154847 037__ $$aFZJ-2014-04109
000154847 041__ $$aEnglish
000154847 1001_ $$0P:(DE-Juel1)145470$$aSchuck, Martin$$b0$$eCorresponding Author$$ufzj
000154847 1112_ $$aDPG-Frühjahrstagung der Sektion Kondensierte Materie (SKM) 2014$$cDresden$$d2014-03-30 - 2014-04-04$$gDPG DRESDEN14$$wGermany
000154847 245__ $$aMetal Organic Chemical Vapour Deposition of monocrystalline Ge1Sb2Te4 (GST) and Sb2Te3
000154847 260__ $$c2014
000154847 3367_ $$0PUB:(DE-HGF)6$$2PUB:(DE-HGF)$$aConference Presentation$$bconf$$mconf$$s1408015267_32481$$xOther
000154847 3367_ $$033$$2EndNote$$aConference Paper
000154847 3367_ $$2DataCite$$aOther
000154847 3367_ $$2ORCID$$aLECTURE_SPEECH
000154847 3367_ $$2DRIVER$$aconferenceObject
000154847 3367_ $$2BibTeX$$aINPROCEEDINGS
000154847 520__ $$aGST is considered as one of the most promising materials for nonvolatile phase-change memories. The phase change between its amorphous and crystalline phase is switched by current pulses of different intensity and duration. For this application the alloys along the GeTe − Sb2Te3 pseudobinary are the most suitable, since they are characterized by fast switching speed and high scalability. Their crystallization characteristics are determined by their composition, which therefore needs to be controlled.Here we present the MOCVD growth of Ge1Sb2Te4 (GST) and Sb2Te3 on Si(111) substrates using triethylantimony (TESb), diethyltelluride (DETe) and digermane as precursors and pure N2 as the carrier gas. A systematic variation of reactor pressure and growth temperature was carried out to obtain crystalline flat layers of only one composition. The deposited material was characterized by means of X-Ray Diffraction, Raman spectroscopy, atomic force and scanning electron microscopy. It was found that at low reactor pressure only 2 alloys were found: Ge1Sb2Te4 (GST) and Sb2Te3.
000154847 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x0
000154847 536__ $$0G:(EU-Grant)310339$$aSYNAPSE - SYnthesis and functionality of chalcogenide NAnostructures for PhaSE change memories (310339)$$c310339$$fFP7-NMP-2012-SMALL-6$$x1
000154847 7001_ $$0P:(DE-Juel1)145686$$aRiess, Sally$$b1$$ufzj
000154847 7001_ $$0P:(DE-Juel1)162500$$aSchreiber, Marcel$$b2$$ufzj
000154847 7001_ $$0P:(DE-Juel1)128617$$aMussler, Gregor$$b3$$ufzj
000154847 7001_ $$0P:(DE-Juel1)128637$$aStoica, Toma$$b4$$ufzj
000154847 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b5$$ufzj
000154847 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, Hilde$$b6$$ufzj
000154847 773__ $$y2014
000154847 909CO $$ooai:juser.fz-juelich.de:154847$$pec_fundedresources$$pVDB$$popenaire
000154847 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)145470$$aForschungszentrum Jülich GmbH$$b0$$kFZJ
000154847 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)145686$$aForschungszentrum Jülich GmbH$$b1$$kFZJ
000154847 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)162500$$aForschungszentrum Jülich GmbH$$b2$$kFZJ
000154847 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128617$$aForschungszentrum Jülich GmbH$$b3$$kFZJ
000154847 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128637$$aForschungszentrum Jülich GmbH$$b4$$kFZJ
000154847 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125588$$aForschungszentrum Jülich GmbH$$b5$$kFZJ
000154847 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125593$$aForschungszentrum Jülich GmbH$$b6$$kFZJ
000154847 9132_ $$0G:(DE-HGF)POF3-523$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Configuration-Based Phenomena$$x0
000154847 9131_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vFrontiers of charge based Electronics$$x0
000154847 9141_ $$y2014
000154847 920__ $$lyes
000154847 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000154847 980__ $$aconf
000154847 980__ $$aVDB
000154847 980__ $$aI:(DE-Juel1)PGI-9-20110106
000154847 980__ $$aUNRESTRICTED