TY  - CONF
AU  - Schuck, Martin
AU  - Riess, Sally
AU  - Schreiber, Marcel
AU  - Mussler, Gregor
AU  - Stoica, Toma
AU  - Grützmacher, Detlev
AU  - Hardtdegen, Hilde
TI  - Metal Organic Chemical Vapour Deposition of monocrystalline Ge1Sb2Te4 (GST) and Sb2Te3
M1  - FZJ-2014-04109
PY  - 2014
AB  - GST is considered as one of the most promising materials for nonvolatile phase-change memories. The phase change between its amorphous and crystalline phase is switched by current pulses of different intensity and duration. For this application the alloys along the GeTe − Sb2Te3 pseudobinary are the most suitable, since they are characterized by fast switching speed and high scalability. Their crystallization characteristics are determined by their composition, which therefore needs to be controlled.Here we present the MOCVD growth of Ge1Sb2Te4 (GST) and Sb2Te3 on Si(111) substrates using triethylantimony (TESb), diethyltelluride (DETe) and digermane as precursors and pure N2 as the carrier gas. A systematic variation of reactor pressure and growth temperature was carried out to obtain crystalline flat layers of only one composition. The deposited material was characterized by means of X-Ray Diffraction, Raman spectroscopy, atomic force and scanning electron microscopy. It was found that at low reactor pressure only 2 alloys were found: Ge1Sb2Te4 (GST) and Sb2Te3.
T2  - DPG-Frühjahrstagung der Sektion Kondensierte Materie (SKM) 2014
CY  - 30 Mar 2014 - 4 Apr 2014, Dresden (Germany)
Y2  - 30 Mar 2014 - 4 Apr 2014
M2  - Dresden, Germany
LB  - PUB:(DE-HGF)6
UR  - https://juser.fz-juelich.de/record/154847
ER  -