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@INPROCEEDINGS{Schuck:154847,
      author       = {Schuck, Martin and Riess, Sally and Schreiber, Marcel and
                      Mussler, Gregor and Stoica, Toma and Grützmacher, Detlev
                      and Hardtdegen, Hilde},
      title        = {{M}etal {O}rganic {C}hemical {V}apour {D}eposition of
                      monocrystalline {G}e1{S}b2{T}e4 ({GST}) and {S}b2{T}e3},
      reportid     = {FZJ-2014-04109},
      year         = {2014},
      abstract     = {GST is considered as one of the most promising materials
                      for nonvolatile phase-change memories. The phase change
                      between its amorphous and crystalline phase is switched by
                      current pulses of different intensity and duration. For this
                      application the alloys along the GeTe − Sb2Te3
                      pseudobinary are the most suitable, since they are
                      characterized by fast switching speed and high scalability.
                      Their crystallization characteristics are determined by
                      their composition, which therefore needs to be
                      controlled.Here we present the MOCVD growth of Ge1Sb2Te4
                      (GST) and Sb2Te3 on Si(111) substrates using
                      triethylantimony (TESb), diethyltelluride (DETe) and
                      digermane as precursors and pure N2 as the carrier gas. A
                      systematic variation of reactor pressure and growth
                      temperature was carried out to obtain crystalline flat
                      layers of only one composition. The deposited material was
                      characterized by means of X-Ray Diffraction, Raman
                      spectroscopy, atomic force and scanning electron microscopy.
                      It was found that at low reactor pressure only 2 alloys were
                      found: Ge1Sb2Te4 (GST) and Sb2Te3.},
      month         = {Mar},
      date          = {2014-03-30},
      organization  = {DPG-Frühjahrstagung der Sektion
                       Kondensierte Materie (SKM) 2014,
                       Dresden (Germany), 30 Mar 2014 - 4 Apr
                       2014},
      subtyp        = {Other},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421) /
                      SYNAPSE - SYnthesis and functionality of chalcogenide
                      NAnostructures for PhaSE change memories (310339)},
      pid          = {G:(DE-HGF)POF2-421 / G:(EU-Grant)310339},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/154847},
}