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@ARTICLE{Long:154961,
      author       = {Long, Nguyen H. and Mavropoulos, Phivos and Zimmermann,
                      Bernd and Bauer, David and Blügel, Stefan and Mokrousov,
                      Yuriy},
      title        = {{S}pin relaxation and spin {H}all transport in 5d
                      transition-metal ultrathin films},
      journal      = {Physical review / B},
      volume       = {90},
      number       = {6},
      issn         = {1098-0121},
      address      = {College Park, Md.},
      publisher    = {APS},
      reportid     = {FZJ-2014-04170},
      pages        = {064406},
      year         = {2014},
      abstract     = {The spin relaxation induced by the Elliott-Yafet mechanism
                      and the extrinsic spin Hall conductivity due to the skew
                      scattering are investigated in 5d transition-metal ultrathin
                      films with self-adatom impurities as scatterers. The values
                      of the Elliott-Yafet parameter and of the spin-flip
                      relaxation rate reveal a correlation with each other that is
                      in agreement with the Elliott approximation. At 10-layer
                      thickness, the spin-flip relaxation time in 5d
                      transition-metal films is quantitatively reported about few
                      hundred nanoseconds at atomic percent. This time scale is
                      one and two orders of magnitude shorter than the values in
                      Au and Cu thin films, respectively. The anisotropy effect of
                      the Elliott-Yafet parameter and of the spin-flip relaxation
                      rate with respect to the direction of the spin-quantization
                      axis in relation to the crystallographic axes is also
                      analyzed. We find that the anisotropy of the spin-flip
                      relaxation rate is enhanced due to the Rashba surface states
                      on the Fermi surface, reaching values as high as $97\%$ in
                      10-layer Hf(0001) film or $71\%$ in 10-layer W(110) film.
                      Finally, the spin Hall conductivity as well as the spin Hall
                      angle due to the skew scattering off self-adatom impurities
                      are calculated using the Boltzmann approach. Our
                      calculations employ a relativistic version of the
                      first-principles full-potential Korringa-Kohn-Rostoker Green
                      function method.},
      cin          = {IAS-1 / PGI-1},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IAS-1-20090406 / I:(DE-Juel1)PGI-1-20110106},
      pnm          = {422 - Spin-based and quantum information (POF2-422)},
      pid          = {G:(DE-HGF)POF2-422},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000339994200005},
      doi          = {10.1103/PhysRevB.90.064406},
      url          = {https://juser.fz-juelich.de/record/154961},
}