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@ARTICLE{Keuter:154971,
      author       = {Keuter, Thomas and Menzler, Norbert H. and Mauer, Georg and
                      Vondahlen, Frank and Vassen, Robert and Buchkremer, Hans
                      Peter},
      title        = {{M}odeling precursor diffusion and reaction of atomic layer
                      deposition in porous structures},
      journal      = {Journal of vacuum science $\&$ technology / A},
      volume       = {33},
      number       = {1},
      issn         = {0734-2101},
      address      = {New York, NY},
      publisher    = {Inst.},
      reportid     = {FZJ-2014-04180},
      pages        = {01A104},
      year         = {2015},
      abstract     = {Atomic layer deposition (ALD) is a technique for depositing
                      thin films of materials with a precise thickness control and
                      uniformity using the self-limitation of the underlying
                      reactions. Usually, it is difficult to predict the result of
                      the ALD process for given external parameters, e.g., the
                      precursor exposure time or the size of the precursor
                      molecules. Therefore, a deeper insight into ALD by modeling
                      the process is needed to improve process control and to
                      achieve more economical coatings. In this paper, a detailed,
                      microscopic approach based on the model developed by
                      Yanguas-Gil and Elam is presented and additionally compared
                      with the experiment. Precursor diffusion and second-order
                      reaction kinetics are combined to identify the influence of
                      the porous substrate's microstructural parameters and the
                      influence of precursor properties on the coating. The
                      thickness of the deposited film is calculated for different
                      depths inside the porous structure in relation to the
                      precursor exposure time, the precursor vapor pressure, and
                      other parameters. Good agreement with experimental results
                      was obtained for ALD zirconiumdioxide (ZrO2) films using the
                      precursors tetrakis(ethylmethylamido)zirconium and O2. The
                      derivation can be adjusted to describe other features of ALD
                      processes, e.g., precursor and reactive site losses,
                      different growth modes, pore size reduction, and surface
                      diffusion.},
      cin          = {IEK-1},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-1-20101013},
      pnm          = {135 - Fuel Cells (POF3-135) / SOFC - Solid Oxide Fuel Cell
                      (SOFC-20140602) / HITEC - Helmholtz Interdisciplinary
                      Doctoral Training in Energy and Climate Research (HITEC)
                      (HITEC-20170406)},
      pid          = {G:(DE-HGF)POF3-135 / G:(DE-Juel1)SOFC-20140602 /
                      G:(DE-Juel1)HITEC-20170406},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000355735400004},
      doi          = {10.1116/1.4892385},
      url          = {https://juser.fz-juelich.de/record/154971},
}