%0 Conference Paper
%A Eichel, Rüdiger-A.
%T Defect-Structure - Property Relationships in aliovalently doped and non-stoichiometric Perovskite Oxides
%I RWTH AAchen
%M FZJ-2014-04372
%D 2014
%Z Rüdiger-A. EichelInstitut für Energie- und Klimaforschung (IEK-9), Forschungszentrum Jülich, Germanyr.eichel@fz-juelich.de
%X Ferroelectric materials based on perovskite oxides offer the advantage that materials properties may be systematically tailored over a wide range either by controlling the microstructre in terms of processing or by means of aliovalent doping and defined non-stoichiometry [1]. Although the strategy of introducing atomic-scale defects that may form defect complexes, which in turn impact the mobility of ferroelectric domain walls, is valid not only for Pb[Zr,Ti]O3 (PZT), but also for lead-free alternatives [2] such as [Bi,Na]TiO3 (BNT) or [K,Na]NbO3 (KNN) for instance, the corresponding defect structure when using Fe2O3- or CuO-doping significantly differs from PZT with tetravalent B-site to KNN where the B-site is pentavalent.Focusing on 'hard' ferroelectrics, the energetics for the formation of dimeric [3,4] and trimeric [5,6] defect complexes between acceptor-type dopant ions and charge compensating oxygen vacancies is considered both from an experimental and theoretical perspective. Moreover, the position of these defects with respect to domain walls [7], their interaction with 180° and non-180° domain walls [5], as well as the reorientation of the defect dipoles during poling [8] is discussed.references:[1]	R.-A. Eichel, H. Kungl and P. Jakes, Mat. Tech. 28 (2013) 5 241[2]	R.-A. Eichel, H. Kungl, Funct. Mat. Lett. 3 (2010) 1–4[3]	R.-A. Eichel, P. Erhart, P. Träskelin, K. Albe, H. Kungl and M.J. Hoffmann, Phys. Rev. Lett. 100 (2008) 095504[4]	E. Aksel, E. Erdem, P. Jakes, J.L. Jones and R.-A. Eichel, Appl. Phys. Lett. 97  (2010) 012903[5]	R.-A. Eichel, E. Erünal, P. Jakes, S. Körbel, C. Elsässer, H. Kungl, J. Acker and M.J. Hoffmann, Appl. Phys. Lett. 102 (2013) 242908[6]	E. Erünal, P. Jakes, S. Körbel, J. Acker, H. Kungl, C. Elsässer, M.J. Hoffmann and R.-A. Eichel, Phys. Rev. B 84, (2011) 184113[7]	P. Jakes, E. Erdem, R.-A. Eichel, L. Jin and D. Damjanovic, Appl. Phys. Lett. 98  (2011) 072907[8]	L.X. Zhang, E. Erdem, X. Ren and R.-A. Eichel, Appl. Phys. Lett. 93 (2008) 202901
%B International Symposium on Advanced Functional Materials
%C 1 Aug 2014 - 2 Aug 2014, Kuala Lumpur (Malaysia)
Y2 1 Aug 2014 - 2 Aug 2014
M2 Kuala Lumpur, Malaysia
%F PUB:(DE-HGF)6
%9 Conference Presentation
%U https://juser.fz-juelich.de/record/155191