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Catalyst-free molecular beam epitaxy growth of InAs nanowires

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2010

37th International Symposium on Compound Semiconductors
Seminar, Takamatsu, JapanTakamatsu, Japan, 31 May 20102010-05-31


Note: Record converted from VDB: 12.11.2012
Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (PGI-9)
  2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
Research Program(s):
  1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2010
Notes: Nachtrag
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The record appears in these collections:
JARA > JARA > JARA-JARA\-FIT
Document types > Presentations > Poster
Institute Collections > PGI > PGI-9
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 Record created 2012-11-13, last modified 2018-02-08
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