000155487 001__ 155487
000155487 005__ 20210129214115.0
000155487 0247_ $$2doi$$a10.1109/LED.2014.2340016
000155487 0247_ $$2ISSN$$a1558-0563
000155487 0247_ $$2ISSN$$a0741-3106
000155487 0247_ $$2WOS$$aWOS:000341574200011
000155487 037__ $$aFZJ-2014-04653
000155487 082__ $$a620
000155487 1001_ $$0P:(DE-HGF)0$$aFleck, Karsten$$b0$$eCorresponding Author
000155487 245__ $$aInterrelation of Sweep and Pulse Analysis of the SET Process in SrTiO$_3$ Resistive Switching Memories
000155487 260__ $$aNew York, NY$$bIEEE$$c2014
000155487 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1409306036_6673
000155487 3367_ $$2DataCite$$aOutput Types/Journal article
000155487 3367_ $$00$$2EndNote$$aJournal Article
000155487 3367_ $$2BibTeX$$aARTICLE
000155487 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000155487 3367_ $$2DRIVER$$aarticle
000155487 520__ $$aIn this letter, we present a study of the SET kinetics of bipolar switching SrTiO3-based resistive memory devices. Pulse measurements on a timescale from 1 (mu ) s to 1 s and voltage sweeps with sweep-rates up to 6 MV/s were performed showing a highly nonlinear correlation between voltage and time. An analytical model is presented that explains the interrelation of both experiments by a comparative analysis of the current–voltage characteristics.
000155487 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x0
000155487 588__ $$aDataset connected to CrossRef, juser.fz-juelich.de
000155487 7001_ $$0P:(DE-HGF)0$$aBottger, Ulrich$$b1
000155487 7001_ $$0P:(DE-HGF)0$$aWaser, Rainer$$b2
000155487 7001_ $$0P:(DE-Juel1)158062$$aMenzel, Stephan$$b3$$ufzj
000155487 773__ $$0PERI:(DE-600)2034325-5$$a10.1109/LED.2014.2340016$$gp. 1 - 1$$p1 - 1$$tIEEE electron device letters$$v1$$x1558-0563$$y2014
000155487 8564_ $$uhttps://juser.fz-juelich.de/record/155487/files/FZJ-2014-04653.pdf$$yRestricted
000155487 909CO $$ooai:juser.fz-juelich.de:155487$$pVDB
000155487 9141_ $$y2014
000155487 915__ $$0StatID:(DE-HGF)0010$$2StatID$$aJCR/ISI refereed
000155487 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR
000155487 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000155487 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000155487 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000155487 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000155487 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000155487 915__ $$0StatID:(DE-HGF)1030$$2StatID$$aDBCoverage$$bCurrent Contents - Life Sciences
000155487 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-HGF)0$$aForschungszentrum Jülich GmbH$$b2$$kFZJ
000155487 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)158062$$aForschungszentrum Jülich GmbH$$b3$$kFZJ
000155487 9132_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000155487 9131_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vFrontiers of charge based Electronics$$x0
000155487 9201_ $$0I:(DE-Juel1)PGI-7-20110106$$kPGI-7$$lElektronische Materialien$$x0
000155487 980__ $$ajournal
000155487 980__ $$aVDB
000155487 980__ $$aI:(DE-Juel1)PGI-7-20110106
000155487 980__ $$aUNRESTRICTED