Hauptseite > Publikationsdatenbank > Interrelation of Sweep and Pulse Analysis of the SET Process in SrTiO$_3$ Resistive Switching Memories > print

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037 _ _ |a FZJ-2014-04653
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|a Fleck, Karsten
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245 _ _ |a Interrelation of Sweep and Pulse Analysis of the SET Process in SrTiO$_3$ Resistive Switching Memories
260 _ _ |a New York, NY
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|c 2014
336 7 _ |a Journal Article
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520 _ _ |a In this letter, we present a study of the SET kinetics of bipolar switching SrTiO3-based resistive memory devices. Pulse measurements on a timescale from 1 (mu ) s to 1 s and voltage sweeps with sweep-rates up to 6 MV/s were performed showing a highly nonlinear correlation between voltage and time. An analytical model is presented that explains the interrelation of both experiments by a comparative analysis of the current–voltage characteristics.
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|a Waser, Rainer
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