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@ARTICLE{Yang:155488,
      author       = {Yang, Yuchao and Gao, Peng and Li, Linze and Pan, Xiaoqing
                      and Tappertzhofen, Stefan and Choi, ShinHyun and Waser,
                      Rainer and Valov, Ilia and Lu, Wei D.},
      title        = {{E}lectrochemical dynamics of nanoscale metallic inclusions
                      in dielectrics},
      journal      = {Nature Communications},
      volume       = {5},
      issn         = {2041-1723},
      address      = {London},
      publisher    = {Nature Publishing Group},
      reportid     = {FZJ-2014-04654},
      pages        = {4232},
      year         = {2014},
      abstract     = {Nanoscale metal inclusions in or on solid-state dielectrics
                      are an integral part of modern electrocatalysis,
                      optoelectronics, capacitors, metamaterials and memory
                      devices. The properties of these composite systems strongly
                      depend on the size, dispersion of the inclusions and their
                      chemical stability, and are usually considered constant.
                      Here we demonstrate that nanoscale inclusions (for example,
                      clusters) in dielectrics dynamically change their shape,
                      size and position upon applied electric field. Through
                      systematic in situ transmission electron microscopy studies,
                      we show that fundamental electrochemical processes can lead
                      to universally observed nucleation and growth of metal
                      clusters, even for inert metals like platinum. The clusters
                      exhibit diverse dynamic behaviours governed by kinetic
                      factors including ion mobility and redox rates, leading to
                      different filament growth modes and structures in memristive
                      devices. These findings reveal the microscopic origin behind
                      resistive switching, and also provide general guidance for
                      the design of novel devices involving electronics and
                      ionics.},
      cin          = {PGI-7},
      ddc          = {500},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000338840000001},
      pubmed       = {pmid:24953477},
      doi          = {10.1038/ncomms5232},
      url          = {https://juser.fz-juelich.de/record/155488},
}