% IMPORTANT: The following is UTF-8 encoded. This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.
@ARTICLE{Galanakis:155921,
author = {Galanakis, I. and Özdoğan, K. and Şaşıoğlu, E. and
Blügel, S.},
title = {{C}onditions for spin-gapless semiconducting behavior in
{M}n2{C}o{A}l inverse {H}eusler compound},
journal = {Journal of applied physics},
volume = {115},
number = {9},
issn = {1089-7550},
address = {Melville, NY},
publisher = {American Institute of Physics},
reportid = {FZJ-2014-04851},
pages = {093908},
year = {2014},
abstract = {Employing ab initio electronic structure calculations, we
investigate the conditions for spin-gapless semiconducting
(SGS) behavior in the inverse Mn2 CoAl Heusler compound. We
show that tetragonalization of the lattice, which can occur
during films growth, keeps the SGS character of the perfect
cubic compound. On the contrary, atomic swaps even between
sites with different local symmetry destroy the SGS
character giving rise to a half-metallic state. Furthermore,
the occurrence of Co-surplus leads also to half-metallicity.
Thus, we propose that in order to achieve SGS behavior
during the growth of Mn2 CoAl (and similar SGS Heusler
compounds) thin films, one should minimize the occurrence of
defects, while small deformations of the lattice, due to the
lattice mismatch with the substrate, do not play a crucial
role.},
cin = {IAS-1 / PGI-1},
ddc = {530},
cid = {I:(DE-Juel1)IAS-1-20090406 / I:(DE-Juel1)PGI-1-20110106},
pnm = {422 - Spin-based and quantum information (POF2-422)},
pid = {G:(DE-HGF)POF2-422},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000332730700037},
doi = {10.1063/1.4867917},
url = {https://juser.fz-juelich.de/record/155921},
}